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SS9013FBU

Fairchild Semiconductor

SS9013FBU by Fairchild Semiconductor

Fairchild Semiconductor SS9013FBU is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 96, and VCE of 20V. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.

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Overview

Elevate your amplifier designs with the SS9013FBU by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor delivers top-quality Small Signal Bipolar Junction Transistors that are perfect for a wide range of applications. With a focus on performance and reliability, this NPN transistor offers a minimum DC Current Gain of 96 and a Maximum Collector-Emitter Voltage of 20V, providing customers with exceptional value and benefits. Upgrade your amplifier projects today with the SS9013FBU for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into circuits and compatibility with other NPN components, making it versatile for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it easier to incorporate into amplifier circuits without the need for complex setups.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor provides reliable and efficient amplification of signals, making it a great choice for audio or signal processing projects.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering, making it convenient to install in various electronic devices or PCB layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections to the circuit board, providing stability and reliability in amplifier applications.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle moderate power levels without overheating, ensuring long-term performance and reliability in amplifier circuits.

Minimum DC Current Gain (hFE): 96

The high minimum DC current gain of 96 indicates strong amplification capabilities, allowing for efficient signal amplification in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for amplifier applications in various environments.

Maximum Collector-Emitter Voltage: 20 V

The maximum collector-emitter voltage of 20V provides a wide voltage range for the transistor to operate within, allowing for flexibility in amplifier circuit design.

Transistor Element Material: SILICON

The silicon transistor element material ensures high performance and reliability, making it a durable choice for amplifier applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current levels in amplifier circuits, providing efficient signal amplification without overheating.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable connection and prevents oxidation, ensuring long-term performance and stability in amplifier applications.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and soldering onto the circuit board, providing a secure connection and stability in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9013FBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

96

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SS9013FBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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