Loading...

SS9013F

Onsemi

SS9013F by Onsemi

SS9013F by Onsemi is a NPN BJT transistor with max VCEsat of 0.6V, hFE of 96, and IC of 0.5A. Ideal for amplifier applications due to its single configuration and max operating temp of 150 °C. Packaged in plastic/epoxy material with cylindrical shape and through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,950

-

-

-

-

Digiode

USA . 869 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

869

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

GreenTree Electronics

Israel . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Problanco Electronics

Mexico . 5,962 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,962

-

-

-

-

Supply Digital

USA . 2,525 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,525

-

-

-

-

TANS Electronics

Latvia . 1,511 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,511

-

-

-

-

Corphita

USA . 1,426 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,426

-

-

-

-

Kulean Microsystems

USA . 1,104 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,104

-

-

-

-

SupplyDigital Components

Austria . 1,069 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,069

-

-

-

-

UHIMA Technologies

Türkiye . 838 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

838

-

-

-

-

Corohmni

South Africa . 78 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

78

-

-

-

-

Overview

Enhance your amplification projects with the Onsemi SS9013F Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor offers high-quality performance and reliability for a variety of amplifier applications. With a low VCEsat of 0.6V and a maximum collector current of 0.5A, this transistor provides value and efficiency to your designs. Trust Onsemi's expertise in semiconductor manufacturing and elevate your projects with the SS9013F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, enhancing its lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design and easier to work with for amplifier circuits.

Maximum VCEsat: 0.6 V

Low collector-emitter saturation voltage helps in reducing power loss and improving efficiency.

Package Shape: ROUND

Compact size and easy to mount in various applications.

Terminal Form: THROUGH-HOLE

Provides easy and secure solder connections for through-hole PCB mounting.

Maximum Power Dissipation (Abs): 0.625 W

Capable of handling moderate power dissipation, suitable for many amplifier applications.

Package Style (Meter): CYLINDRICAL

Unique cylindrical package style allows for efficient heat dissipation.

Minimum DC Current Gain (hFE): 96

High DC current gain ensures stable and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions.

Maximum Collector-Emitter Voltage: 20 V

Suitable for low voltage applications, providing protection against excessive voltage.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics for small signal amplification.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate collector current for amplifier applications.

Terminal Position: BOTTOM

Clear terminal positioning for easy installation and connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9013F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

96

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.6 V

Trade Compliance

SS9013F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20