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SS9012G

Onsemi

SS9012G by Onsemi

SS9012G by Onsemi is a PNP BJT transistor with max VCEsat of 0.6V, hFE of 112, and IC of 0.5A. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates b/w -55 °C to 150°C, making it suitable for various electronic designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,580 parts In-Stock

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Vyrian

USA . 2,411 parts In-Stock

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Kepictronics

USA . 160,000 parts In-Stock

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Kulean Microsystems

USA . 7,527 parts In-Stock

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SupplyDigital Components

Austria . 4,159 parts In-Stock

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Problanco Electronics

Mexico . 2,071 parts In-Stock

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Corphita

USA . 2,019 parts In-Stock

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TANS Electronics

Latvia . 857 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 421 parts In-Stock

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Corohmni

South Africa . 237 parts In-Stock

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Overview

Discover the SS9012G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for various amplifier applications. With a reliable manufacturer like Onsemi, you can trust in the performance and durability of this PNP transistor. Offering a low VCEsat of 0.6V and a minimum DC current gain of 112, this transistor provides value and efficiency to your electronic projects. Upgrade your amplifier circuits with the SS9012G and experience enhanced functionality and stability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into existing circuits and provides versatility in amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures straightforward implementation in amplifier projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum VCEsat: 0.6 V

Low VCEsat value indicates minimal saturation voltage, leading to efficient operation and reduced power dissipation.

Package Shape: ROUND

Round package shape allows for easy mounting and handling, suitable for various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form facilitates soldering and connection in PCBs, ensuring secure and reliable connections.

No. of Terminals: 3

Three terminals provide necessary connections for the transistor, ensuring proper functionality in amplifier circuits.

Maximum Power Dissipation (Abs): 0.625 W

High maximum power dissipation allows for handling larger power loads, ensuring reliable performance in demanding applications.

Package Style: CYLINDRICAL

Cylindrical package style provides a compact and space-saving design, ideal for applications with limited space.

Maximum Power Dissipation Ambient: 0.625 W

The same as above

Minimum DC Current Gain (hFE): 112

High minimum DC current gain provides stable amplification and ensures consistent performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 20 V

High maximum collector-emitter voltage rating ensures safe operation in applications with varying voltage levels.

Transistor Element Material: SILICON

Silicon material for transistor element provides efficient performance and reliability in amplifier applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in extreme cold conditions without compromising performance.

Maximum Collector Current (IC): 0.5 A

High maximum collector current rating allows for handling larger currents, ensuring versatility in amplifier applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and connection in PCB layouts, ensuring secure and reliable connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9012G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

112

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.625 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.6 V

Trade Compliance

SS9012G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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