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SS9012GTA

Onsemi

SS9012GTA by Onsemi

SS9012GTA by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 20V and max current of 0.5A. With a min hFE of 112, it's ideal for amplifier applications due to its 0.626W power dissipation capability. This through-hole transistor operates up to 150°C in a cylindrical package suitable for various electronic designs.

Median Price

$0.033

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 11,922 parts In-Stock

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$0.035

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$0.017

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$0.035

$0.017

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Mouser Electronics

USA . 1,846 parts In-Stock

1+ parts

$0.150

100+ parts

$0.067

1k+ parts

$0.034

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$0.029

1,846

$0.150

$0.067

$0.034

$0.029

Rochester

USA . 62,073 parts In-Stock

1+ parts

-

100+ parts

$0.029

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$0.024

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$0.022

62,073

-

$0.029

$0.024

$0.022

Farnell

UK . 38,000 parts In-Stock

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DigiKey

USA . 37,707 parts In-Stock

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37,707

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Flip Electronics (Authorized)

USA . 37,707 parts In-Stock

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Verical

USA . 28,000 parts In-Stock

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Chip1Stop

Japan . 11,922 parts In-Stock

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$0.031

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11,922

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$0.031

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Distributors (In-Stock)

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Vyrian

USA . 1,607 parts In-Stock

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$0.017

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1,607

$0.017

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Digiode

USA . 3,213 parts In-Stock

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$0.021

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3,213

$0.021

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Flip Electronics

USA . 37,707 parts In-Stock

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37,707

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DigiKey Marketplace

USA . 37,707 parts In-Stock

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Chip Stock

USA . 32,000 parts In-Stock

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Corohmni

South Africa . 303 parts In-Stock

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$0.017

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303

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Corphita

USA . 1,578 parts In-Stock

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$0.020

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1,578

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Component Stockers USA

USA . 42,618 parts In-Stock

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$0.020

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$0.020

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42,618

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$0.020

$0.020

$0.020

Metaverse IC Inc.

Canada . 38,000 parts In-Stock

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Continental Prestige Electronics

USA . 20,153 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,355 parts In-Stock

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SupplyDigital Components

Austria . 5,750 parts In-Stock

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Problanco Electronics

Mexico . 4,203 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 3,730 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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Assy Fe

Spain . 1,000 parts In-Stock

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Kulean Microsystems

USA . 990 parts In-Stock

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UHIMA Technologies

Türkiye . 715 parts In-Stock

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715

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Overview

Discover the superior performance and reliability of the SS9012GTA by Onsemi, a top-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With its durable plastic/epoxy package body and PNP polarity, this transistor offers exceptional value and benefits to customers. Trust in Onsemi's reputation for manufacturing excellence and experience seamless integration into your projects with this high-quality component. Upgrade your electronics today with the SS9012GTA and unlock endless possibilities for innovation and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components and makes the transistor durable and reliable.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, especially in amplifier circuits.

Configuration: SINGLE

Simplified design and easy to work with for basic amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in such applications.

Maximum Power Dissipation (Abs): 0.626 W

Can handle a reasonable amount of power, suitable for smaller scale applications.

Package Shape: ROUND

Compact design allows for easy integration into various circuit layouts.

Terminal Form: THROUGH-HOLE

Simplifies the process of soldering and connecting the transistor to a circuit board.

No. of Terminals: 3

Provides necessary connections for proper functioning of the transistor in a circuit.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without any performance issues.

Maximum Collector-Emitter Voltage: 20 V

Can handle relatively high voltages, making it versatile for different circuit requirements.

Transistor Element Material: SILICON

Silicon is a common material known for its reliability and efficiency in electronic components.

Maximum Collector Current (IC): 0.5 A

Allows for moderate current flow, suitable for many amplifier applications.

Terminal Finish: MATTE TIN

Provides a good surface for soldering, ensuring reliable connections.

Terminal Position: BOTTOM

Facilitates easy mounting and soldering on a circuit board.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9012GTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

112

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SS9012GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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