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SS9014A

Onsemi

SS9014A by Onsemi

SS9014A by Onsemi is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 60, and fT of 270MHz. Ideal for amplifier applications due to its low power dissipation, high collector-emitter voltage of 45V, and small package size. Operating temperature range from -55 °C to 150°C makes it versatile for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,649 parts In-Stock

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Digiode

USA . 2,077 parts In-Stock

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TANS Electronics

Latvia . 7,190 parts In-Stock

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Problanco Electronics

Mexico . 5,052 parts In-Stock

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Kulean Microsystems

USA . 3,712 parts In-Stock

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SupplyDigital Components

Austria . 2,800 parts In-Stock

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Supply Digital

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Corphita

USA . 1,369 parts In-Stock

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Corohmni

South Africa . 395 parts In-Stock

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UHIMA Technologies

Türkiye . 288 parts In-Stock

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Overview

Enhance your electronic projects with the SS9014A by Onsemi, a high-quality NPN small signal bipolar junction transistor designed for amplifier applications. Manufactured by Onsemi, a trusted name in semiconductor technology, this transistor boasts a low VCEsat of 0.3V and a minimum DC current gain of 60, ensuring optimal performance. With a maximum collector-emitter voltage of 45V and a compact package style, the SS9014A is versatile and reliable for a wide range of applications. Elevate your projects with the superior quality and performance of the SS9014A by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures long-lasting performance and ease of handling.

Polarity or Channel Type: NPN

Standard NPN configuration for ease of integration into various circuit designs.

Configuration: SINGLE

Simplified single configuration for easy installation and use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency.

Package Shape: RECTANGULAR

Rectangular shape for easy mounting and compact design.

Terminal Form: THROUGH-HOLE

Through-hole terminals for secure and reliable connections.

Maximum Power Dissipation (Abs): 0.45 W

Efficient power dissipation capability for reliable operation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style for easy handling and installation.

Minimum DC Current Gain (hFE): 60

High DC current gain for improved amplification performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in various environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance for better high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating for increased reliability in various applications.

Transistor Element Material: SILICON

Silicon transistor element material for enhanced performance and durability.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature for use in harsh environmental conditions.

Maximum Collector Current (IC): 0.1 A

Maximum collector current rating for reliable operation in various circuit designs.

Terminal Position: BOTTOM

Bottom terminal position for convenient soldering and connection.

Nominal Transition Frequency (fT): 270 MHz

High transition frequency for improved high-frequency performance in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9014A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.45 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

SS9014A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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