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SS9013

Onsemi

SS9013 by Onsemi

SS9013 by Onsemi is a NPN BJT transistor with max VCEsat of 0.6V, hFE of 40, and IC of 0.5A. Ideal for amplifier applications due to its single configuration and cylindrical package style. With a max operating temp of 150 °C, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,020 parts In-Stock

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Vyrian

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Bristol Electronics

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SupplyDigital Components

Austria . 7,039 parts In-Stock

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Corphita

USA . 1,782 parts In-Stock

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TANS Electronics

Latvia . 1,250 parts In-Stock

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Supply Digital

USA . 755 parts In-Stock

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Kulean Microsystems

USA . 500 parts In-Stock

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Corohmni

South Africa . 392 parts In-Stock

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Problanco Electronics

Mexico . 264 parts In-Stock

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UHIMA Technologies

Türkiye . 227 parts In-Stock

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Overview

Enhance your amplifier designs with the SS9013 by Onsemi, a high-quality NPN transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this small signal bipolar junction transistor is perfect for a wide range of amplifier applications. With a low VCEsat of 0.6V and a minimum DC current gain of 40, the SS9013 provides superior efficiency and power dissipation. Trust Onsemi to deliver top-notch quality and innovation, making your projects stand out with unparalleled performance and value. Upgrade your amplifier circuits today with the SS9013!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplification applications, making it versatile for various circuit designs.

Configuration: SINGLE

Simplifies circuit design and makes it easy to integrate into existing systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification, ensuring optimal performance in amplifier circuits.

Maximum VCEsat: 0.6 V

Low VCEsat minimizes power loss and improves efficiency in amplification circuits.

Package Shape: ROUND

Compact package shape saves space and allows for easy mounting in various PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections for reliable operation in circuits.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capacity, this transistor can handle high power loads without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for efficient heat dissipation, ensuring stable performance under load.

Minimum DC Current Gain (hFE): 40

High DC current gain allows for better amplification and signal processing in circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 20 V

With a high maximum VCE, this transistor can withstand higher voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 0.5 A

High maximum collector current allows for handling high current loads in amplifier circuits.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, optimizing circuit integration.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9013 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.6 V

Trade Compliance

SS9013 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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