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SS9014DBU

Onsemi

SS9014DBU by Onsemi

SS9014DBU by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.1A. It is commonly used as an amplifier in various applications.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,400,937 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

1k+ parts

$0.022

10k+ parts

-

2,400,937

$0.026

$0.025

$0.022

-

Mouser Electronics

USA . 450 parts In-Stock

1+ parts

$0.240

100+ parts

$0.103

1k+ parts

$0.046

10k+ parts

$0.030

450

$0.240

$0.103

$0.046

$0.030

DigiKey

USA . 2,028,912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.040

2,028,912

-

-

-

$0.040

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,600 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

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2,600

$0.024

-

-

-

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.045

100+ parts

-

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650

$0.045

-

-

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Vyrian

USA . 1,583,740 parts In-Stock

1+ parts

-

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1,583,740

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Chip Stock

USA . 11,500 parts In-Stock

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11,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,533,779 parts In-Stock

1+ parts

$0.021

100+ parts

-

1k+ parts

-

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1,533,779

$0.021

-

-

-

Corphita

USA . 3,018 parts In-Stock

1+ parts

$0.022

100+ parts

-

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-

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3,018

$0.022

-

-

-

Corohmni

South Africa . 98 parts In-Stock

1+ parts

$0.025

100+ parts

-

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98

$0.025

-

-

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Component Stockers USA

USA . 2,029,072 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

2,029,072

$0.030

$0.020

$0.020

$0.020

Argo Parts USA

USA . 4,794 parts In-Stock

1+ parts

$0.045

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

4,794

$0.045

-

-

$0.044

Continental Prestige Electronics

USA . 2,919 parts In-Stock

1+ parts

$0.045

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

2,919

$0.045

-

-

$0.044

Andel Nordic

Denmark . 297 parts In-Stock

1+ parts

$8.658

100+ parts

-

1k+ parts

$8.312

10k+ parts

$8.312

297

$8.658

-

$8.312

$8.312

Metaverse IC Inc.

Canada . 88,000 parts In-Stock

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88,000

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QUARKTWIN TECHNOLOGY LTD

USA . 26,932 parts In-Stock

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26,932

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Perfect Parts

USA . 18,118 parts In-Stock

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18,118

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Kulean Microsystems

USA . 5,183 parts In-Stock

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5,183

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SupplyDigital Components

Austria . 3,877 parts In-Stock

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3,877

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Problanco Electronics

Mexico . 3,299 parts In-Stock

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3,299

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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TANS Electronics

Latvia . 1,623 parts In-Stock

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1,623

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Supply Digital

USA . 1,441 parts In-Stock

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1,441

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UHIMA Technologies

Türkiye . 40 parts In-Stock

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40

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Overview

Upgrade your audio experience with the SS9014DBU by Onsemi. Known for their superior quality and reliability, Onsemi delivers another top-notch product in the category of Small Signal Bipolar Junction Transistors. Designed for amplifiers, this NPN transistor offers exceptional performance without compromising on value. With a maximum power dissipation of 0.45W and a minimum DC current gain of 400, the SS9014DBU guarantees optimal sound output. Its plastic/epoxy package ensures durability, while its through-hole terminal form simplifies installation. Don't settle for average; choose the SS9014DBU and elevate your audio system to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material provides durability and insulation, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration ensures that this transistor can handle both positive and negative voltages, allowing for versatile circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes this transistor suitable for applications where a single amplification stage is required.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, this transistor delivers efficient signal amplification, making it ideal for audio and radio frequency applications.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various circuit boards and systems, providing convenience and flexibility in installation.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures a robust mechanical connection and facilitates easy soldering, making this transistor suitable for production and prototyping purposes.

No. of Elements: 1

With a single element, this transistor offers simplicity in design and ease of use, making it a cost-effective option for small signal applications.

No. of Terminals: 3

The three terminals provide the necessary electrical connections for proper operation, enabling versatile circuit configurations with external components.

Maximum Power Dissipation (Abs): 0.45 W

With a maximum power dissipation capacity of 0.45 W, this transistor can handle higher power levels while maintaining reliable performance and preventing overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient heat dissipation and facilitates easy mounting and handling, ensuring optimal performance in various environments.

Minimum DC Current Gain (hFE): 400

The minimum DC current gain of 400 ensures high amplification capability, making this transistor suitable for applications requiring significant signal amplification.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand higher temperature environments, ensuring stable and reliable operation.

Maximum Collector-Emitter Voltage: 45 V

The maximum collector-emitter voltage rating of 45 V allows for versatile usage in different voltage scenarios while ensuring safe and efficient operation.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers excellent electrical performance and reliability, making this product a dependable choice for small signal applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for a wide range of small signal applications.

Terminal Finish: TIN

The terminal finish with tin coating provides excellent solderability, ensuring secure connections and enhancing the overall reliability of this transistor.

Terminal Position: BOTTOM

The bottom terminal position allows for easy circuit board mounting and integration, simplifying the installation process and facilitating efficient circuit designs.

Nominal Transition Frequency (fT): 270 MHz

With a nominal transition frequency of 270 MHz, this transistor exhibits excellent high-frequency response, making it suitable for applications requiring fast switching and high-speed signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9014DBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

400

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SS9014DBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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