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SS9012

Onsemi

SS9012 by Onsemi

SS9012 by Onsemi is a PNP BJT transistor with max VCEsat of 0.6V, hFE of 64, and IC of 0.5A. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates b/w -55 °C to 150°C with a max VCE of 20V, making it suitable for various electronic designs.

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Vyrian

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Digiode

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Fibra_Brandt Electronic GMBH

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LittleDiode

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Assy Fe

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Kulean Microsystems

USA . 5,275 parts In-Stock

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TANS Electronics

Latvia . 3,287 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Corphita

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Corohmni

South Africa . 456 parts In-Stock

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UHIMA Technologies

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Overview

Discover the power of the SS9012 by Onsemi, a top-quality small signal bipolar junction transistor perfect for amplifier applications. With its PNP configuration and high DC current gain, this transistor offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, the SS9012 guarantees top-notch quality and durability. Its plastic/epoxy package body ensures long-lasting use, while its low VCEsat and high maximum collector current provide outstanding value to customers. Upgrade your electronics with the SS9012 and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for small signal applications

Polarity or Channel Type: PNP

Suitable for amplification and signal switching applications

Configuration: SINGLE

Simplified design and easy to implement in circuits

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes

Maximum VCEsat: 0.6 V

Low saturation voltage for efficient operation

Package Shape: ROUND

Compact package shape for easy mounting

Terminal Form: THROUGH-HOLE

Traditional terminal form for soldering onto PCBs

No. of Terminals: 3

Simple and straightforward connection setup

Maximum Power Dissipation (Abs): 0.625 W

Suitable for low power applications

Package Style (Meter): CYLINDRICAL

Space-efficient design for compact circuits

Maximum Power Dissipation Ambient: 0.625 W

Can handle power dissipation in various operating conditions

Minimum DC Current Gain (hFE): 64

Consistent and reliable current gain characteristics

Maximum Operating Temperature: 150 °C

Wide temperature range for versatile applications

Maximum Collector-Emitter Voltage: 20 V

Sufficient voltage handling capability

Transistor Element Material: SILICON

Highly stable and commonly used material for transistors

Minimum Operating Temperature: -55 °C

Wide temperature range for operation in harsh environments

Maximum Collector Current (IC): 0.5 A

Adequate current handling capacity

Terminal Position: BOTTOM

Easy to mount and solder on PCBs

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9012 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

64

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.625 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.6 V

Trade Compliance

SS9012 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5935-00-258-8129, 5935002588129

NIIN

002588129

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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