Loading...

SS9013G

Onsemi

SS9013G by Onsemi

SS9013G by Onsemi is a NPN BJT transistor with max VCEsat of 0.6V, hFE of 112, and IC of 0.5A. Ideal for amplifier applications due to its single configuration and cylindrical package style. With a max operating temp of 150 °C, it offers reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,614 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,614

-

-

-

-

Vyrian

USA . 2,558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,558

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kepictronics

USA . 170,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

170,000

-

-

-

-

Problanco Electronics

Mexico . 3,773 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,773

-

-

-

-

Kulean Microsystems

USA . 3,231 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,231

-

-

-

-

Corphita

USA . 2,013 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,013

-

-

-

-

TANS Electronics

Latvia . 1,899 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,899

-

-

-

-

Supply Digital

USA . 1,262 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,262

-

-

-

-

Corohmni

South Africa . 391 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

391

-

-

-

-

UHIMA Technologies

Türkiye . 319 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

319

-

-

-

-

Assy Fe

Spain . 95 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

95

-

-

-

-

SupplyDigital Components

Austria . 22 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22

-

-

-

-

Overview

Discover the SS9013G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for amplification applications. With a maximum VCEsat of 0.6V and a minimum DC Current Gain of 112, this NPN transistor offers superior performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, the SS9013G provides customers with exceptional value and benefits. Ideal for a wide range of electronic devices, this transistor is the perfect choice for amplifying signals with precision and efficiency. Embrace innovation and elevate your projects with the SS9013G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for protecting the internal components of the transistor.

Polarity or Channel Type: NPN

Common type of bipolar junction transistor that allows for efficient amplification of signals.

Configuration: SINGLE

Simplified design for easy integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals, making it a suitable choice for audio or radio frequency applications.

Maximum VCEsat: 0.6 V

Low saturation voltage helps in reducing power consumption and heat generation.

Package Shape: ROUND

Compact shape for efficient placement on circuit boards.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards for secure connections.

No. of Terminals: 3

Simple three-terminal design for easy connectivity in circuits.

Maximum Power Dissipation (Abs): 0.625 W

Able to handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Unique cylindrical package style for a distinct look in electronic designs.

Minimum DC Current Gain (hFE): 112

High DC current gain for efficient signal amplification.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 20 V

Allows for application in low voltage circuits.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability in transistor operation.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate collector currents for various applications.

Terminal Position: BOTTOM

Convenient terminal position for easy soldering and connections in circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9013G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

112

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.6 V

Trade Compliance

SS9013G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20