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SS9013E

Onsemi

SS9013E by Onsemi

SS9013E by Onsemi is a NPN BJT transistor with max VCEsat of 0.6V, hFE of 78, and IC of 0.5A. Ideal for amplifier applications due to its single configuration and cylindrical package style. With a max operating temp of 150 °C, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,131 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 8,253 parts In-Stock

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TANS Electronics

Latvia . 7,315 parts In-Stock

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SupplyDigital Components

Austria . 6,911 parts In-Stock

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Kulean Microsystems

USA . 6,089 parts In-Stock

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Corphita

USA . 1,566 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 786 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the SS9013E by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. Manufactured by Onsemi, known for their reliable and innovative products, this NPN transistor offers a maximum VCEsat of 0.6V and a minimum DC current gain of 78. With a maximum collector current of 0.5A and a maximum operating temperature of 150 °C, this transistor ensures optimal performance and durability. Upgrade your circuits with the SS9013E and experience enhanced signal processing and amplification like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes installation easier.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures optimal performance in such circuits.

Maximum VCEsat: 0.6 V

Low VCEsat reduces power loss in the transistor, improving overall efficiency.

Package Shape: ROUND

The round shape provides structural stability and efficient heat dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and mount the transistor onto a circuit board.

No. of Terminals: 3

Having 3 terminals allows for more versatile connectivity options in circuit design.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle higher power loads without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-efficient, making it suitable for smaller electronic devices.

Minimum DC Current Gain (hFE): 78

A high DC current gain ensures accurate amplification in amplifier circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to function reliably in various environments.

Maximum Collector-Emitter Voltage: 20 V

With a high maximum collector-emitter voltage, this transistor is suitable for applications requiring higher voltage tolerances.

Transistor Element Material: SILICON

Silicon transistors offer superior performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current allows for higher power handling capabilities.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy connections and integration into circuit designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9013E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

78

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.6 V

Trade Compliance

SS9013E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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