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SS9012E

Onsemi

SS9012E by Onsemi

SS9012E by Onsemi is a PNP BJT transistor with max VCEsat of 0.6V, hFE of 78, and IC of 0.5A. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates b/w -55 °C to 150°C with a max VCE of 20V, making it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,793 parts In-Stock

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Digiode

USA . 936 parts In-Stock

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Kulean Microsystems

USA . 8,351 parts In-Stock

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SupplyDigital Components

Austria . 7,893 parts In-Stock

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TANS Electronics

Latvia . 5,486 parts In-Stock

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Problanco Electronics

Mexico . 1,665 parts In-Stock

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Corphita

USA . 1,141 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 440 parts In-Stock

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Corohmni

South Africa . 77 parts In-Stock

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Overview

Discover the power of the SS9012E by Onsemi, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) offers exceptional quality and reliability, making it perfect for amplifier applications. With a low VCEsat of 0.6V and a high DC current gain of 78, this PNP transistor provides superior performance. Its compact design and maximum power dissipation of 0.625W ensure efficiency and durability. Trust Onsemi to deliver cutting-edge technology that exceeds expectations. Unlock endless possibilities with the SS9012E and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the transistor easy to handle and suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to implement in various amplifier circuits.

Maximum VCEsat: 0.6 V

Low saturation voltage helps in reducing power losses and increasing efficiency in amplifier applications.

Package Shape: ROUND

Compact round shape fits well in different circuit layouts and saves space.

Maximum Power Dissipation (Abs): 0.625 W

Can handle high power dissipation, allowing for robust performance in amplifier circuits.

Minimum DC Current Gain (hFE): 78

High DC current gain ensures consistent and stable amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for various environments.

Maximum Collector-Emitter Voltage: 20 V

Can withstand high collector-emitter voltage levels, making it versatile in amplifier applications.

Transistor Element Material: SILICON

Silicon transistors offer good electrical properties and reliability, ensuring long-term performance.

Maximum Collector Current (IC): 0.5 A

Can handle moderate collector currents, suitable for many amplifier applications.

Terminal Position: BOTTOM

Through-hole terminals on the bottom make it easy to mount on circuit boards and connect with other components.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9012E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

78

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.625 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.6 V

Trade Compliance

SS9012E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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