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SS9014CBU

Onsemi

SS9014CBU by Onsemi

SS9014CBU by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and a min DC current gain of 200. It is commonly used in amplifier applications due to its max power dissipation of 0.45W and nominal transition frequency of 270MHz. The package style is cylindrical with through-hole terminals for easy installation.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1 parts In-Stock

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$0.027

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1

$0.027

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Element14

Singapore . 15,234 parts In-Stock

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$0.216

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$0.091

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$0.061

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$0.042

15,234

$0.216

$0.091

$0.061

$0.042

Rochester

USA . 92,110 parts In-Stock

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-

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$0.035

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$0.029

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$0.026

92,110

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$0.035

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$0.026

DigiKey

USA . 92,110 parts In-Stock

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$0.040

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$0.040

Flip Electronics (Authorized)

USA . 9,850 parts In-Stock

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9,850

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Chip1Stop

Japan . 1 parts In-Stock

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$0.025

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Distributors (In-Stock)

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Digiode

USA . 2,687 parts In-Stock

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$0.026

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$0.026

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Nova Conductors

Japan . 10 parts In-Stock

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$0.036

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10

$0.036

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Bristol Electronics

USA . 6,000 parts In-Stock

1+ parts

$0.240

100+ parts

$0.120

1k+ parts

$0.048

10k+ parts

$0.036

6,000

$0.240

$0.120

$0.048

$0.036

DigiKey Marketplace

USA . 108,029 parts In-Stock

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Vyrian

USA . 46,357 parts In-Stock

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Infinite Electronics LLP

India . 40,000 parts In-Stock

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Chip Stock

USA . 21,000 parts In-Stock

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Flip Electronics

USA . 9,850 parts In-Stock

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9,850

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ACDS - Activité Composants Distribution Service

France . 6,000 parts In-Stock

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Dan-Mar Components

USA . 6,000 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 46,321 parts In-Stock

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$0.021

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$0.021

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Corphita

USA . 2,472 parts In-Stock

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$0.024

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Corohmni

South Africa . 254 parts In-Stock

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254

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Argo Parts USA

USA . 4,978 parts In-Stock

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$0.036

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$0.035

4,978

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$0.035

Netroflash

USA . 50 parts In-Stock

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$0.036

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Continental Prestige Electronics

USA . 108,029 parts In-Stock

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$0.025

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,006 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

Germany . 8,739 parts In-Stock

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SupplyDigital Components

Austria . 6,223 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 4,183 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 980 parts In-Stock

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TANS Electronics

Latvia . 978 parts In-Stock

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Kulean Microsystems

USA . 816 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the SS9014CBU by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. The SS9014CBU is a Small Signal Bipolar Junction Transistor (BJT) that is perfect for amplifier applications. With a maximum power dissipation of 0.45 W and a minimum DC current gain of 200, this NPN transistor offers unmatched performance and efficiency. Trust Onsemi to deliver excellence in every component, and experience the difference with the SS9014CBU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material makes the transistor easy to handle and install.

Polarity or Channel Type: NPN

Commonly used in amplifiers and signal processing circuits.

Configuration: SINGLE

Simple design for easy integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals accurately and efficiently.

Package Shape: ROUND

Space-saving design suitable for compact electronic devices.

Terminal Form: THROUGH-HOLE

Easy to solder onto PCBs for secure connections.

Maximum Power Dissipation (Abs): 0.45 W

Can handle reasonable power levels, suitable for various applications.

Package Style (Meter): CYLINDRICAL

Sleek and modern design for a professional finish.

Minimum DC Current Gain (hFE): 200

Ensures stable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures for reliable performance.

Maximum Collector-Emitter Voltage: 45 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

High-quality material for efficient signal amplification.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current loads for various applications.

Terminal Finish: Tin (Sn)

Corrosion-resistant finish for long-lasting connections.

Terminal Position: BOTTOM

Easy to mount on PCBs and provides a secure connection.

Nominal Transition Frequency (fT): 270 MHz

High frequency response for amplifying fast-changing signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SS9014CBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SS9014CBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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