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MMBT3906-7

Diodes Incorporated

MMBT3906-7 by Diodes Incorporated

Diodes Inc. MMBT3906-7 is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for switching applications, it has a min. DC current gain of 30 and operates b/w -55 to 150°C efficiently in a small outline package shape for surface mount assembly.

Median Price

$0.068

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

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DF Sales Co.

USA . 11,622 parts In-Stock

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DF Sales Co.

USA . 11,622 parts In-Stock

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Component Electronics Inc.

Canada . 5,700 parts In-Stock

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Forefront Electronics and Design

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R&J Components

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Semi Source

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Atlantic Semiconductor

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Vyrian

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Prism Electronics

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EMSNET

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Inventory MP

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PC Components Company LLC

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Semtec, LLC

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A2Z Electronics, Inc.

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Electronic Expediters

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Bristol Electronics

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Resion

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Connector Distribution Corp

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Right Parts Inc.

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Contempo Components LLC

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A&K Electronics

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Ashlea Components Ltd

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SPM Sales

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Quantum Digital Technology

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Elcom Components

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Classic Components Corporation

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Sea View Technologies

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LWI Electronics Inc

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Nova Conductors

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North Shore Components

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Benley Electronics

USA . 1 parts In-Stock

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AZTECH Wire

Italy . 231 parts In-Stock

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Ampacity Inc.

Singapore . 920 parts In-Stock

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

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Argo Parts USA

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Bastille Electronics

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Overview

Looking for a reliable small signal transistor to enhance your electronic projects? Look no further than the MMBT3906-7 by Diodes Incorporated. With a solid reputation for quality and innovation, Diodes Incorporated delivers a PNP bipolar junction transistor that is perfect for switching applications. This surface-mount transistor offers a maximum collector-emitter voltage of 40V and a minimum DC current gain of 30, making it ideal for a wide range of projects. Trust Diodes Incorporated to provide you with the high-quality components you need for success in all your electronics endeavors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching circuits, making this transistor ideal for switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable and efficient performance in such circuits.

Surface Mount: YES

Being surface mountable, this transistor can be easily integrated into modern PCB designs, saving space and improving assembly efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and mounting on PCBs, optimizing space utilization.

Terminal Form: GULL WING

The gull wing terminal form provides robust solder connections and facilitates automated assembly processes.

Maximum Power Dissipation: 0.3 W

With a high power dissipation rating, this transistor can handle moderate power loads without overheating.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures reliable amplification of current in the transistor, enhancing its performance in various circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance of 150°C allows this transistor to operate reliably in demanding environments.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating of 40V makes this transistor suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon transistors offer better performance and reliability compared to other materials, making this transistor a reliable choice.

Maximum Turn On Time (ton): 70 ns

The fast turn-on time of 70 nanoseconds ensures quick response and efficient switching operation in circuits.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature of -55°C, this transistor can function reliably in harsh cold environments.

Maximum Collector Current (IC): 0.2 A

The maximum collector current rating of 0.2A allows this transistor to handle moderate current loads, suitable for various applications.

Maximum Turn Off Time (toff): 300 ns

The maximum turn-off time of 300 nanoseconds ensures efficient switching off of the transistor, improving overall circuit performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides corrosion resistance and reliable solder joints, ensuring long-term stability in circuit connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and compatibility with different PCB layouts, enhancing versatility.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency of 250MHz indicates fast switching speeds and high-frequency performance, ideal for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT3906-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MMBT3906-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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