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KSC1845FBU

Fairchild Semiconductor

KSC1845FBU by Fairchild Semiconductor

KSC1845FBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 300, ideal for amplifier applications. It has a max power dissipation of 0.5W and can operate at temperatures up to 150°C. The package style is cylindrical with matte tin terminal finish and through-hole terminal form.

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Overview

Enhance your electronic designs with the reliable KSC1845FBU Small Signal Bipolar Junction Transistor from Fairchild Semiconductor. Manufactured with precision and expertise, this NPN transistor is ideal for amplifier applications, offering a maximum collector current of 0.05A and a minimum DC current gain of 300. With a maximum operating temperature of 150°C, this transistor provides unmatched performance and durability. Trust Fairchild Semiconductor to deliver quality components that exceed expectations. Elevate your projects with the KSC1845FBU and experience superior results today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Enhances durability and resistance to external elements, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplification circuit designs, making it versatile for various applications.

Configuration: SINGLE

Simplified design for straightforward circuit integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Package Shape: ROUND

Compact shape for easy mounting and space-saving in circuit layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards for secure connections.

Maximum Power Dissipation (Abs): 0.5 W

Able to handle sufficient power for amplification without overheating or damage.

Package Style (Meter): CYLINDRICAL

Streamlined design for efficient circuit layout and assembly.

Minimum DC Current Gain (hFE): 300

Consistent and reliable amplification capability with high current gain.

Maximum Operating Temperature: 150 °C

Can operate at elevated temperatures without performance degradation, suitable for various environments.

Maximum Collector-Emitter Voltage: 120 V

Able to handle higher voltage levels, increasing the range of applications it can be used in.

Transistor Element Material: SILICON

High-quality material providing stability and reliability in performance.

Maximum Collector Current (IC): 0.05 A

Supports moderate current flow for amplification tasks without overheating.

Terminal Finish: MATTE TIN

Provides a reliable and durable terminal finish for long-lasting connections.

Terminal Position: BOTTOM

Facilitates easy and secure mounting onto circuit boards for stable connections.

Nominal Transition Frequency (fT): 110 MHz

High transition frequency for fast signal response and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1845FBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1845FBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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