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KSC1008YTA

Onsemi

KSC1008YTA by Onsemi

KSC1008YTA by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and max current of 0.7A. With a min DC current gain of 120, it's ideal for switching applications up to 150°C. This through-hole transistor in cylindrical package has a transition frequency of 50MHz, making it suitable for high-speed operations.

Median Price

$0.137

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,579 parts In-Stock

1+ parts

$0.480

100+ parts

$0.198

1k+ parts

$0.117

10k+ parts

$0.100

1,579

$0.480

$0.198

$0.117

$0.100

DigiKey

USA . 7,332 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.077

7,332

-

-

-

$0.077

Rochester

USA . 625 parts In-Stock

1+ parts

-

100+ parts

$0.069

1k+ parts

$0.057

10k+ parts

$0.051

625

-

$0.069

$0.057

$0.051

Element14

Singapore . 243 parts In-Stock

1+ parts

-

100+ parts

$0.197

1k+ parts

$0.090

10k+ parts

$0.089

243

-

$0.197

$0.090

$0.089

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,259 parts In-Stock

1+ parts

$0.087

100+ parts

-

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-

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1,259

$0.087

-

-

-

Digiode

USA . 1,362 parts In-Stock

1+ parts

$0.361

100+ parts

-

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-

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-

1,362

$0.361

-

-

-

Chip Stock

USA . 53,500 parts In-Stock

1+ parts

-

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53,500

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-

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Cyclops Electronics Ltd

UK . 100 parts In-Stock

1+ parts

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100

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 362 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

-

362

$0.087

-

-

-

Corphita

USA . 900 parts In-Stock

1+ parts

$0.342

100+ parts

-

1k+ parts

-

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-

900

$0.342

-

-

-

Continental Prestige Electronics

USA . 275 parts In-Stock

1+ parts

$0.418

100+ parts

$0.154

1k+ parts

$0.067

10k+ parts

$0.054

275

$0.418

$0.154

$0.067

$0.054

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

-

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90,000

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ChipstoGo Electronic ltd

UK . 88,000 parts In-Stock

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88,000

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Kepictronics

USA . 36,422 parts In-Stock

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36,422

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QUARKTWIN TECHNOLOGY LTD

USA . 17,025 parts In-Stock

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17,025

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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A-Z Elektronik GmbH

Germany . 5,019 parts In-Stock

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5,019

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Kulean Microsystems

USA . 4,928 parts In-Stock

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4,928

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Problanco Electronics

Mexico . 3,542 parts In-Stock

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3,542

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TANS Electronics

Latvia . 3,494 parts In-Stock

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3,494

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SupplyDigital Components

Austria . 3,371 parts In-Stock

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3,371

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Alle Elektronik GmbH

Germany . 3,346 parts In-Stock

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3,346

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Perfect Parts

USA . 3,120 parts In-Stock

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3,120

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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Supply Digital

USA . 1,240 parts In-Stock

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1,240

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UHIMA Technologies

Türkiye . 719 parts In-Stock

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719

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Overview

Discover the unmatched quality and reliability of the KSC1008YTA by Onsemi, a leading manufacturer in the electronics industry. This Small Signal Bipolar Junction Transistor (BJT) is perfect for various switching applications, offering exceptional performance and efficiency. With a high DC current gain of 120 and a maximum collector-emitter voltage of 60V, this NPN transistor provides superior functionality. Its compact cylindrical package design ensures easy integration, making it ideal for a wide range of electronic projects. Trust Onsemi to deliver top-notch products that exceed expectations every time. Unlock the full potential of your designs with the KSC1008YTA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design and reduces complexity for easier integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Maximum Power Dissipation (Abs): 0.8 W

With a high power dissipation capability, the transistor can handle a variety of loads without overheating.

Package Shape: ROUND

The round package shape allows for easy mounting and fitting in different circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and facilitate easy soldering on PCBs.

No. of Terminals: 3

Simple 3-terminal setup for straightforward circuit connectivity and compatibility.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures reliable amplification and signal processing in circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand extreme conditions without performance degradation.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and stability for consistent performance.

Maximum Collector Current (IC): 0.7 A

Capable of handling moderate collector currents for various circuit requirements.

Terminal Finish: MATTE TIN

Matte tin finish offers corrosion resistance and ensures reliable electrical contact.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency enables fast switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1008YTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1008YTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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