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KSC1815YTA-O

Onsemi

KSC1815YTA-O by Onsemi

KSC1815YTA-O by Onsemi is a NPN BJT transistor with max VCEsat of 0.25V, hFE of 120, and fT of 80MHz. Ideal for amplifier applications due to its low power dissipation (0.4W) and high collector-emitter voltage (50V). Its plastic/epoxy package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,220 parts In-Stock

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Digiode

USA . 1,083 parts In-Stock

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Kulean Microsystems

USA . 6,753 parts In-Stock

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Problanco Electronics

Mexico . 4,232 parts In-Stock

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SupplyDigital Components

Austria . 3,890 parts In-Stock

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TANS Electronics

Latvia . 2,427 parts In-Stock

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Corphita

USA . 2,380 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 721 parts In-Stock

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Corohmni

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Overview

Unleash the power of high-quality small signal bipolar junction transistors with the KSC1815YTA-O by Onsemi. Manufactured by a trusted industry leader, this NPN transistor is perfect for amplifier applications, offering a maximum VCEsat of 0.25 V and a minimum DC current gain of 120. With a maximum collector-emitter voltage of 50V and a maximum collector current of 0.15A, this transistor delivers reliable performance in a compact cylindrical package. Elevate your electronic projects with the superior value and benefits of the KSC1815YTA-O from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: NPN

Commonly used type of transistor in amplifier circuits, making it versatile for a wide range of applications.

Configuration: SINGLE

Simplified design with a single transistor, easier for circuit integration and troubleshooting.

Transistor Application: AMPLIFIER

Optimized for amplifying signals, providing high gain and low distortion in amplifier circuits.

Maximum VCEsat: 0.25 V

Low saturation voltage helps in minimizing power loss and improving efficiency in the circuit.

Package Shape: ROUND

Compact shape for easy mounting and space-saving in the circuit layout.

Terminal Form: THROUGH-HOLE

Easy to solder and sturdy connection for reliable performance.

No. of Terminals: 3

Simpler connection setup with fewer terminals, reducing chances of errors during installation.

Maximum Power Dissipation (Abs): 0.4 W

Able to handle moderate power levels, suitable for small signal applications.

Package Style (Meter): CYLINDRICAL

Provides a compact form factor and ease of handling for installation and mounting.

Maximum Power Dissipation Ambient: 0.4 W

Efficient heat dissipation capability in various ambient temperatures for reliable operation.

Minimum DC Current Gain (hFE): 120

High DC current gain for better amplification capability in the circuit.

Maximum Operating Temperature: 150 °C

Able to withstand high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Base Capacitance: 3 pF

Low capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

Sufficient voltage rating for safe operation in various circuits and applications.

Transistor Element Material: SILICON

Highly reliable material for transistor construction, ensuring stable performance over time.

Maximum Collector Current (IC): 0.15 A

Able to handle moderate collector currents, suitable for small signal applications.

Terminal Position: BOTTOM

Convenient terminal layout for easy connection and mounting.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency for fast response in high-frequency amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1815YTA-O attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

KSC1815YTA-O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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