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KSC1815YTA-L

Onsemi

KSC1815YTA-L by Onsemi

KSC1815YTA-L by Onsemi is a NPN BJT transistor with a max VCEsat of 0.25V, hFE of 120, and fT of 80MHz. Ideal for amplifier applications due to its low power dissipation and high collector current capacity up to 0.15A at 50V.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 3,101 parts In-Stock

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Vyrian

USA . 2,043 parts In-Stock

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Problanco Electronics

Mexico . 6,287 parts In-Stock

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SupplyDigital Components

Austria . 6,013 parts In-Stock

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Kulean Microsystems

USA . 3,912 parts In-Stock

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Corphita

USA . 1,671 parts In-Stock

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TANS Electronics

Latvia . 1,160 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 62 parts In-Stock

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UHIMA Technologies

Türkiye . 11 parts In-Stock

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Overview

Unlock the power of innovation with the KSC1815YTA-L by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor is ideal for amplifier applications. With a maximum VCEsat of 0.25V and a minimum DC current gain of 120, this transistor offers superior performance. Its compact package design and high reliability make it perfect for a wide range of electronic projects. Experience the value and benefits of the KSC1815YTA-L and take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

Commonly used type of transistor that is suitable for a wide range of applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to work with.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in amplifier circuits.

Maximum VCEsat: 0.25 V

Low saturation voltage helps minimize power loss and improve efficiency.

Package Shape: ROUND

Compact and space-saving design for easy integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Simplified installation process and increased mechanical strength compared to surface mount components.

No. of Terminals: 3

Provides necessary connections for efficient operation in circuits.

Maximum Power Dissipation (Abs): 0.4 W

Can handle relatively high power levels without overheating, ensuring reliable performance.

Package Style (Meter): CYLINDRICAL

Compact and versatile package style that allows for easy handling and mounting.

Maximum Power Dissipation Ambient: 0.4 W

Can operate efficiently in various ambient conditions without compromising performance.

Minimum DC Current Gain (hFE): 120

High gain ensures accurate amplification and signal processing.

Maximum Operating Temperature: 150 °C

Able to withstand high temperatures, suitable for a wide range of operating environments.

Maximum Collector-Base Capacitance: 3 pF

Low capacitance minimizes signal distortion and ensures high-speed performance.

Maximum Collector-Emitter Voltage: 50 V

Can handle high voltages, making it suitable for various voltage levels in circuits.

Transistor Element Material: SILICON

Provides reliable and consistent performance over a wide range of operating conditions.

Maximum Collector Current (IC): 0.15 A

Able to handle moderate current levels, suitable for many amplifier applications.

Terminal Position: BOTTOM

Simplifies circuit layout and makes it easier to connect to other components.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency enables high-speed signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1815YTA-L attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

KSC1815YTA-L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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