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KSC1008GTA

Onsemi

KSC1008GTA by Onsemi

KSC1008GTA by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 60V, max. collector current of 0.7A, and min. DC current gain of 200. It is used for switching applications in circuits requiring a power dissipation of up to 0.8W at an operating temperature of 150°C.

Median Price

$0.141

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 374 parts In-Stock

1+ parts

$0.250

100+ parts

$0.110

1k+ parts

$0.049

10k+ parts

$0.032

374

$0.250

$0.110

$0.049

$0.032

Rochester

USA . 104,029 parts In-Stock

1+ parts

-

100+ parts

$0.032

1k+ parts

$0.027

10k+ parts

$0.024

104,029

-

$0.032

$0.027

$0.024

Verical

USA . 60,000 parts In-Stock

1+ parts

-

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60,000

-

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DigiKey

USA . 13,425 parts In-Stock

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-

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13,425

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Flip Electronics (Authorized)

USA . 13,425 parts In-Stock

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13,425

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Distributors (In-Stock)

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Digiode

USA . 741 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

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741

$0.024

-

-

-

Vyrian

USA . 525 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

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525

$0.025

-

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Chip Stock

USA . 29,000 parts In-Stock

1+ parts

-

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29,000

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Flip Electronics

USA . 13,425 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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13,425

-

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DigiKey Marketplace

USA . 13,425 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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13,425

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,590 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

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1,590

$0.022

-

-

-

Corohmni

South Africa . 163 parts In-Stock

1+ parts

$0.025

100+ parts

-

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163

$0.025

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Component Stockers USA

USA . 78,499 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

78,499

$0.030

$0.020

$0.020

$0.020

Continental Prestige Electronics

USA . 104,029 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.026

104,029

-

-

-

$0.026

Metaverse IC Inc.

Canada . 36,530 parts In-Stock

1+ parts

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36,530

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QUARKTWIN TECHNOLOGY LTD

USA . 21,645 parts In-Stock

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21,645

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Problanco Electronics

Mexico . 6,782 parts In-Stock

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6,782

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A-Z Elektronik GmbH

Germany . 6,612 parts In-Stock

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6,612

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Kulean Microsystems

USA . 5,030 parts In-Stock

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5,030

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TANS Electronics

Latvia . 4,574 parts In-Stock

1+ parts

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4,574

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Alle Elektronik GmbH

Germany . 4,408 parts In-Stock

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4,408

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SupplyDigital Components

Austria . 3,344 parts In-Stock

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3,344

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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UHIMA Technologies

Türkiye . 525 parts In-Stock

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525

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Supply Digital

USA . 299 parts In-Stock

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299

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Overview

Enhance the performance of your electronic devices with the KSC1008GTA by Onsemi. Designed with precision and expertise, this NPN small signal bipolar junction transistor offers superior quality and reliability. Ideal for switching applications, this transistor provides seamless operation and efficient power management. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 200, this product ensures optimal functionality in various electronic circuits. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the KSC1008GTA and experience enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and makes it easier to use in various applications.

Transistor Application: SWITCHING

Ideal for applications that require switching functionality, allowing for efficient operation.

Package Shape: ROUND

The round shape helps in easy placement and mounting in circuits.

Terminal Form: THROUGH-HOLE

Provides stable and secure connections in circuit boards, ensuring reliable performance.

No. of Terminals: 3

Optimal number of terminals for basic transistor applications, providing necessary connections.

Maximum Power Dissipation (Abs): 0.8 W

Can handle a power dissipation of up to 0.8 watts, suitable for various low to medium power applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is common and easy to handle, making the transistor widely accepted in the industry.

Minimum DC Current Gain (hFE): 200

Higher minimum DC current gain ensures consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, suitable for various industrial and electronic applications.

Maximum Collector-Emitter Voltage: 60 V

Can handle up to 60 volts, making it suitable for different voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon is a widely used material for transistors due to its efficiency and reliability.

Maximum Collector Current (IC): 0.7 A

Able to carry current up to 0.7 amps, suitable for various low to medium current applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable connections for the transistor.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure mounting on circuit boards.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50 MHz, this transistor is suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSC1008GTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC1008GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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