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KSA733CLTA

Fairchild Semiconductor

KSA733CLTA by Fairchild Semiconductor

KSA733CLTA by Fairchild Semiconductor is a PNP small signal bipolar junction transistor (BJT) with a max power dissipation of 0.25W and a min DC current gain of 350. It is commonly used as an amplifier in various applications due to its high transition frequency of 180MHz and max collector-emitter voltage of 50V.

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$0.026

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Overview

Discover the KSA733CLTA, a high-quality Small Signal Bipolar Junction Transistor manufactured by Fairchild Semiconductor. With its PNP polarity and single configuration, this transistor is perfect for amplifier applications. Its plastic/epoxy body material ensures durability and reliability. Offering a maximum power dissipation of 0.25W and a minimum DC current gain of 350, this product delivers exceptional performance. Whether you're designing audio equipment or electronic circuits, the KSA733CLTA provides value, benefits, and advantages that surpass expectations. Trust Fairchild Semiconductor for superior quality and innovative solutions to meet your needs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This product is made of plastic/epoxy which provides durability and resistance to environmental factors, making it a reliable choice.

Polarity or Channel Type:

PNP - The PNP configuration allows for easy interface with other components, enhancing compatibility and flexibility in circuit designs.

Configuration:

SINGLE - The single configuration simplifies circuit layouts and reduces space requirements, providing ease of use and efficient integration.

Transistor Application:

AMPLIFIER - Designed for amplifier applications, this transistor ensures high-quality amplification and signal processing, making it ideal for audio or signal amplification projects.

Package Shape:

ROUND - The round package shape enables easy mounting and connection, ensuring a secure and efficient installation.

Terminal Form:

THROUGH-HOLE - With through-hole terminals, this product offers excellent contact reliability and hassle-free soldering, providing easy integration onto PCBs.

No. of Elements:

1 - Having a single element simplifies circuit design and reduces component count, resulting in better cost-effectiveness and ease of manufacturing.

No. of Terminals:

3 - The three terminals offer straightforward connections, allowing for convenient integration into various circuit applications.

Maximum Power Dissipation (Abs):

0.25 W - With a maximum power dissipation of 0.25 W, this transistor can handle moderate power levels, ensuring reliable performance under normal operating conditions.

Package Style (Meter):

CYLINDRICAL - The cylindrical package style facilitates efficient heat dissipation and mechanical stability, ensuring long-term reliability in challenging environments.

Minimum DC Current Gain (hFE):

350 - The high minimum DC current gain of 350 guarantees excellent signal amplification and ensures reliable performance in a wide range of applications.

Maximum Operating Temperature:

150 °C - With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for demanding applications or environments.

Maximum Collector-Emitter Voltage:

50 V - The maximum collector-emitter voltage of 50 V provides a wide voltage range, allowing for versatile usage in different voltage conditions.

Transistor Element Material:

SILICON - The silicon transistor element material ensures high performance and reliability, making it a preferred choice for various electronic applications.

Maximum Collector Current (IC):

0.15 A - With a maximum collector current of 0.15 A, this transistor can handle moderate current levels, providing reliable performance in a variety of circuits.

Terminal Finish:

MATTE TIN - The matte tin terminal finish guarantees corrosion resistance and excellent solderability, ensuring a long lifespan and easy reworkability.

Terminal Position:

BOTTOM - The bottom terminal position simplifies PCB layout and component placement, enhancing ease of assembly and reducing assembly time.

Nominal Transition Frequency (fT):

180 MHz - With a nominal transition frequency of 180 MHz, this transistor delivers excellent high-frequency performance, making it suitable for applications requiring fast switching or high bandwidth.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA733CLTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

350

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA733CLTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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