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KSA708O

Onsemi

KSA708O by Onsemi

KSA708O by Onsemi is a PNP BJT transistor with VCEsat of 0.7V, hFE of 70, and IC of 0.7A. Ideal for switching applications due to its 60V VCEO and 50MHz fT. Packaged in cylindrical shape with through-hole terminals, it can handle up to 0.8W power dissipation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 975 parts In-Stock

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Digiode

USA . 449 parts In-Stock

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Kepictronics

USA . 89,000 parts In-Stock

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TANS Electronics

Latvia . 6,530 parts In-Stock

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Problanco Electronics

Mexico . 5,276 parts In-Stock

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SupplyDigital Components

Austria . 4,860 parts In-Stock

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Supply Digital

USA . 2,892 parts In-Stock

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Corphita

USA . 2,617 parts In-Stock

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Kulean Microsystems

USA . 1,588 parts In-Stock

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Corohmni

South Africa . 378 parts In-Stock

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UHIMA Technologies

Türkiye . 139 parts In-Stock

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Overview

Experience unmatched performance and reliability with the KSA708O by Onsemi, a leading manufacturer of high-quality electronic components. This PNP Small Signal Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum VCEsat of 0.7V and a minimum DC current gain (hFE) of 70. Its durable plastic/epoxy package body material and cylindrical shape ensure long-lasting performance in various environments. Upgrade your projects today with the KSA708O and discover the superior value, benefits, and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the transistor easy to handle and install.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require PNP transistors, enhancing compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the chances of errors during installation.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for a wide range of electronic projects that require fast switching speeds.

Maximum VCEsat: 0.7 V

Low VCEsat value ensures efficient operation and minimal power loss in switching applications.

Package Shape: ROUND

The round package shape allows for easy mounting and ensures a secure fit in a variety of applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a sturdy connection and simplify the soldering process during installation.

Maximum Power Dissipation (Abs): 0.8 W

With a high maximum power dissipation, this transistor can handle power spikes without overheating, ensuring reliable operation.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compact size and efficient heat dissipation, ideal for space-constrained applications.

Maximum Power Dissipation Ambient: 0.8 W

The transistor can dissipate heat efficiently in various ambient conditions, ensuring it operates reliably in different environments.

Minimum DC Current Gain (hFE): 70

The high minimum DC current gain ensures consistent performance and amplification capabilities in different circuit configurations.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for versatile use in both industrial and consumer applications.

Maximum Collector-Base Capacitance: 13 pF

Low collector-base capacitance helps in reducing signal distortion and improving the efficiency of high-frequency circuits.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating ensures the transistor can handle high voltages without breakdown, enhancing its reliability.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and stable electrical properties, ensuring long-term reliability of the transistor.

Maximum Collector Current (IC): 0.7 A

With a high maximum collector current rating, this transistor can handle moderate current loads without overheating.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and soldering, enhancing the ease of integration into circuit designs.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency ensures fast switching speeds and enables the transistor to operate efficiently in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA708O attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

13 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.8 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA708O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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