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KSA708YTA

Onsemi

KSA708YTA by Onsemi

KSA708YTA by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. Featuring a min. DC current gain of 120 and max. power dissipation of 0.8W, it operates at up to 150°C. This through-hole transistor has a cylindrical package style and is suitable for high-frequency operations up to 50MHz.

Median Price

$0.208

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,978 parts In-Stock

1+ parts

$0.350

100+ parts

$0.109

1k+ parts

$0.082

10k+ parts

-

1,978

$0.350

$0.109

$0.082

-

DigiKey

USA . 4,454 parts In-Stock

1+ parts

$0.400

100+ parts

$0.154

1k+ parts

$0.102

10k+ parts

-

4,454

$0.400

$0.154

$0.102

-

Verical

USA . 125,636 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.065

125,636

-

-

-

$0.065

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

4,000

-

$0.030

$0.025

$0.023

Flip Electronics (Authorized)

USA . 1,817 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,817

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-

-

-

Distributors (In-Stock)

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Digiode

USA . 328 parts In-Stock

1+ parts

$0.024

100+ parts

-

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-

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328

$0.024

-

-

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Vyrian

USA . 640 parts In-Stock

1+ parts

$0.025

100+ parts

-

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-

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640

$0.025

-

-

-

Chip Stock

USA . 40,000 parts In-Stock

1+ parts

-

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40,000

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Flip Electronics

USA . 21,817 parts In-Stock

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-

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21,817

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-

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Cyclops Electronics Ltd

UK . 1,725 parts In-Stock

1+ parts

-

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1,725

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-

Distributors (Availability)

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Corphita

USA . 1,530 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

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1,530

$0.022

-

-

-

Corohmni

South Africa . 288 parts In-Stock

1+ parts

$0.057

100+ parts

-

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288

$0.057

-

-

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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Futuretech Components

Singapore . 20,000 parts In-Stock

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20,000

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Lixinc

USA . 16,672 parts In-Stock

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16,672

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Perfect Parts

USA . 10,264 parts In-Stock

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10,264

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Problanco Electronics

Mexico . 8,124 parts In-Stock

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8,124

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Kulean Microsystems

USA . 6,368 parts In-Stock

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6,368

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A-Z Elektronik GmbH

Germany . 5,531 parts In-Stock

1+ parts

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5,531

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Alle Elektronik GmbH

Germany . 3,687 parts In-Stock

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3,687

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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SupplyDigital Components

Austria . 1,515 parts In-Stock

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1,515

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TANS Electronics

Latvia . 817 parts In-Stock

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817

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UHIMA Technologies

Türkiye . 812 parts In-Stock

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812

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Supply Digital

USA . 258 parts In-Stock

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258

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Overview

Enhance your electronic projects with the KSA708YTA by Onsemi. These Small Signal Bipolar Junction Transistors offer reliable performance and durability, thanks to the high-quality manufacturing standards of Onsemi. Ideal for switching applications, this PNP transistor provides a seamless solution for your circuit needs. Experience the value and benefits of this product, from its high DC current gain to its maximum operating temperature of 150°C. Trust Onsemi to deliver exceptional quality and performance in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering flexibility and compatibility with existing circuit designs.

Configuration: SINGLE

Simplified design and easy integration into circuits, making it ideal for straightforward switching applications.

Transistor Application: SWITCHING

Specifically designed for switching purposes, offering efficient and reliable performance in switching applications.

Maximum Power Dissipation (Abs): 0.8 W

Can handle up to 0.8 watts of power dissipation, making it suitable for applications with moderate power requirements.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150°C, providing reliability in high-temperature environments.

Maximum Collector-Emitter Voltage: 60 V

Capable of handling up to 60 volts, suitable for a wide range of voltage requirements in different applications.

Maximum Collector Current (IC): 0.7 A

Can handle up to 0.7 amps of collector current, making it suitable for applications with moderate current requirements.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency of 50 MHz allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA708YTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA708YTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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