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KSA708Y-C

Onsemi

KSA708Y-C by Onsemi

KSA708Y-C by Onsemi is a PNP BJT transistor with max VCEsat of 0.7V, hFE of 120, and IC of 0.7A. Ideal for switching applications due to its single configuration and cylindrical package style. With a max operating temp of 150 °C, it's suitable for various electronic designs requiring high-speed performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,287 parts In-Stock

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Vyrian

USA . 285 parts In-Stock

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SupplyDigital Components

Austria . 5,699 parts In-Stock

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Kulean Microsystems

USA . 5,665 parts In-Stock

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TANS Electronics

Latvia . 5,620 parts In-Stock

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Corphita

USA . 1,778 parts In-Stock

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Problanco Electronics

Mexico . 1,066 parts In-Stock

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UHIMA Technologies

Türkiye . 969 parts In-Stock

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Corohmni

South Africa . 151 parts In-Stock

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Overview

Enhance your electronic designs with the KSA708Y-C by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their cutting-edge technology and innovation, this PNP transistor is perfect for switching applications. With a low VCEsat of 0.7V and a high DC current gain of 120, this transistor offers exceptional performance and reliability. Whether you're working on consumer electronics or industrial control systems, the KSA708Y-C provides the value and efficiency you need to bring your projects to life. Elevate your designs with Onsemi's superior components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required for proper circuit operation.

Configuration: SINGLE

Simplified circuit design and installation with a single transistor.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and efficiency.

Maximum VCEsat: 0.7 V

Low VCEsat minimizes power loss and improves overall efficiency of the transistor.

Package Shape: ROUND

Compact round shape for easy mounting and integration into various circuit designs.

Terminal Form: THROUGH-HOLE

Allows for easy and secure through-hole mounting on a PCB.

No. of Terminals: 3

Simplified connections with only 3 terminals, reducing complexity in circuit layout.

Maximum Power Dissipation (Abs): 0.8 W

Can handle moderate power dissipation to prevent overheating and ensure stability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides easy installation and space-saving benefits.

Maximum Power Dissipation Ambient: 0.8 W

Can dissipate heat efficiently even in ambient conditions, ensuring reliability.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures stable and consistent amplification in various applications.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 60 V

Can handle higher voltages, making it versatile for a range of applications.

Transistor Element Material: SILICON

Silicon material offers reliable performance and durability for long-term use.

Maximum Collector Current (IC): 0.7 A

Capable of handling moderate collector current for various switching applications.

Terminal Position: BOTTOM

Bottom terminal position for easy PCB mounting and connection.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA708Y-C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.8 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA708Y-C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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