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KSA733-C

Onsemi

KSA733-C by Onsemi

The Onsemi KSA733-C is a PNP BJT transistor with max VCEsat of 0.3V, hFE of 40, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 180MHz and max operating temp of 150 °C in a cylindrical package style.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 2,999 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 7,571 parts In-Stock

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Problanco Electronics

Mexico . 7,010 parts In-Stock

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SupplyDigital Components

Austria . 3,584 parts In-Stock

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Kulean Microsystems

USA . 3,281 parts In-Stock

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Corphita

USA . 2,920 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 103 parts In-Stock

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UHIMA Technologies

Türkiye . 41 parts In-Stock

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Overview

Enhance your electronic designs with the KSA733-C by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance in amplifier applications. Manufactured by Onsemi, a trusted industry leader, this PNP transistor features a maximum VCEsat of 0.3V and a minimum DC Current Gain of 40, ensuring reliable and efficient operation. With a maximum collector-emitter voltage of 50V and a maximum power dissipation of 0.25W, this transistor is ideal for a wide range of projects. Elevate your circuits with the KSA733-C and experience enhanced functionality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material which makes the product easy to handle and long-lasting.

Polarity or Channel Type: PNP

Suitable for use in amplifiers and switching circuits.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications.

Maximum VCEsat: 0.3 V

Low saturation voltage ensures efficient performance and minimal power loss.

Package Shape: ROUND

Compact and space-saving design.

Terminal Form: THROUGH-HOLE

Easy to mount and solder.

Maximum Power Dissipation (Abs): 0.25 W

Suitable for low power applications.

Package Style (Meter): CYLINDRICAL

Uniform heat dissipation for better reliability.

Maximum Power Dissipation Ambient: 0.25 W

Maintains stable performance under varying temperature conditions.

Minimum DC Current Gain (hFE): 40

Ensures consistent amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 50 V

Allows for higher voltage handling capabilities.

Transistor Element Material: SILICON

Highly efficient material for transistor elements.

Maximum Collector Current (IC): 0.15 A

Suitable for low to medium current applications.

Terminal Position: BOTTOM

Easy to connect in circuit layout.

Nominal Transition Frequency (fT): 180 MHz

Capable of high frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA733-C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

KSA733-C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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