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KSA709OBU

Onsemi

KSA709OBU by Onsemi

KSA709OBU by Onsemi is a PNP BJT transistor with hFE of 70, VCE of 150V, and IC of 0.7A. Ideal for amplifier applications, it operates up to 150 °C with a transition frequency of 50MHz. The package style is cylindrical with matte tin finish and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,489 parts In-Stock

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Vyrian

USA . 1,040 parts In-Stock

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1,040

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SupplyDigital Components

Austria . 6,761 parts In-Stock

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TANS Electronics

Latvia . 4,109 parts In-Stock

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Problanco Electronics

Mexico . 1,422 parts In-Stock

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Corphita

USA . 1,319 parts In-Stock

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1,319

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UHIMA Technologies

Türkiye . 833 parts In-Stock

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Kulean Microsystems

USA . 665 parts In-Stock

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Supply Digital

USA . 537 parts In-Stock

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Corohmni

South Africa . 436 parts In-Stock

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Overview

Discover the power and precision of the KSA709OBU by Onsemi, a top-tier manufacturer in the industry. With its high-quality construction and superior performance, this small signal bipolar junction transistor (BJT) is perfect for amplifier applications. Its single configuration and PNP polarity make it versatile and easy to use. Experience the value and benefits of this product with a minimum DC current gain of 70 and a maximum operating temperature of 150 °C. Trust in Onsemi for reliability and innovation in every component. Choose the KSA709OBU for your next project and see the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to implement in various electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

The round package shape offers good thermal properties and allows for easier mounting in circular or cylindrical board layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are easy to solder, ensuring reliable electrical contact.

Maximum Collector-Emitter Voltage: 150 V

With a high maximum voltage rating, this transistor can handle higher voltage applications effectively.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency allows for fast switching and amplification of high-frequency signals, making it ideal for applications requiring high bandwidth.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA709OBU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA709OBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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