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KSA708-C

Onsemi

KSA708-C by Onsemi

KSA708-C by Onsemi is a PNP BJT transistor with VCEsat of 0.7V, hFE of 40, and IC of 0.7A. Ideal for switching applications, it has a max operating temp of 150 °C and VCEO of 60V. Packaged in plastic/epoxy with cylindrical shape and through-hole terminals, it offers a power dissipation of 0.8W.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,079 parts In-Stock

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Vyrian

USA . 1,706 parts In-Stock

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Kulean Microsystems

USA . 5,478 parts In-Stock

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SupplyDigital Components

Austria . 5,145 parts In-Stock

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TANS Electronics

Latvia . 3,569 parts In-Stock

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Problanco Electronics

Mexico . 2,907 parts In-Stock

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Corphita

USA . 2,600 parts In-Stock

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Corohmni

South Africa . 364 parts In-Stock

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UHIMA Technologies

Türkiye . 319 parts In-Stock

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Supply Digital

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Overview

Unleash the power of innovation with the Onsemi KSA708-C small signal bipolar junction transistor. Crafted by a trusted manufacturer, this PNP transistor is ideal for switching applications, offering reliability and performance that exceeds expectations. With a low VCEsat of 0.7V and a maximum collector current of 0.7A, this transistor provides efficiency and precision in a compact package. Elevate your projects with the quality and value of the KSA708-C from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred, offering compatibility with existing circuits.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient performance in such scenarios.

Maximum VCEsat: 0.7 V

Low VCEsat ensures minimal power loss and high efficiency.

Package Shape: ROUND

Easy to handle and mount in various applications.

Terminal Form: THROUGH-HOLE

Traditional through-hole mounting for easy installation and soldering.

Maximum Power Dissipation (Abs): 0.8 W

Can handle moderate power dissipation, suitable for various applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact form factor for space-constrained designs.

Maximum Power Dissipation Ambient: 0.8 W

Withstands ambient conditions while maintaining performance.

Minimum DC Current Gain (hFE): 40

Minimum DC current gain ensures reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments.

Maximum Collector-Emitter Voltage: 60 V

Handles high collector-emitter voltages, suitable for different voltage requirements.

Transistor Element Material: SILICON

Silicon material provides reliable performance and durability.

Maximum Collector Current (IC): 0.7 A

Can handle moderate collector current for various applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy connection and soldering in circuits.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency enables fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA708-C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.8 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA708-C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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