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KSA708R-C

Onsemi

KSA708R-C by Onsemi

The Onsemi KSA708R-C is a PNP BJT transistor with VCEsat of 0.7V, hFE of 40, and IC of 0.7A. Ideal for switching applications, it has a max operating temp of 150 °C and VCEO of 60V. With a cylindrical package style, it offers 0.8W power dissipation in through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,774 parts In-Stock

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Vyrian

USA . 718 parts In-Stock

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Problanco Electronics

Mexico . 7,629 parts In-Stock

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SupplyDigital Components

Austria . 7,436 parts In-Stock

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Kulean Microsystems

USA . 2,966 parts In-Stock

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TANS Electronics

Latvia . 1,152 parts In-Stock

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UHIMA Technologies

Türkiye . 569 parts In-Stock

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569

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Corphita

USA . 266 parts In-Stock

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Corohmni

South Africa . 184 parts In-Stock

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Overview

Unleash the power of innovation with the KSA708R-C by Onsemi. Crafted with precision and expertise, this small signal bipolar junction transistor is designed to elevate your switching applications to new heights. With a maximum VCEsat of 0.7V and a minimum DC current gain of 40, this PNP transistor offers unparalleled performance and reliability. Whether you're in the automotive industry, telecommunications, or consumer electronics, the KSA708R-C delivers exceptional value and efficiency. Trust Onsemi to provide cutting-edge solutions that drive success and ensure a brighter future for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in power switching applications, providing efficient performance.

Configuration: SINGLE

Simplified circuit design and easy to use in various electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring reliable and fast switching performance.

Maximum VCEsat: 0.7 V

Low VCEsat ensures minimal power loss and high efficiency in switching applications.

Package Shape: ROUND

Unique round shape for easy mounting and integration into electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and ease of soldering.

Maximum Power Dissipation (Abs): 0.8 W

Capable of handling high power dissipation, suitable for most small signal applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers space-efficient design and easy integration.

Maximum Power Dissipation Ambient: 0.8 W

Able to dissipate heat effectively in various operating conditions, ensuring reliable performance.

Minimum DC Current Gain (hFE): 40

High DC current gain allows for amplification and signal control in circuits.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 60 V

High VCE voltage rating provides reliable performance in various voltage applications.

Transistor Element Material: SILICON

Silicon material ensures stable and consistent performance over a wide range of temperatures.

Maximum Collector Current (IC): 0.7 A

Capable of handling moderate collector currents, suitable for small signal applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connection in circuit designs.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast switching speeds and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA708R-C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.8 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA708R-C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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