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KSA733

Onsemi

KSA733 by Onsemi

The Onsemi KSA733 is a PNP BJT transistor with max VCEsat of 0.3V, hFE of 40, and IC of 0.15A. Ideal for amplifier applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

USA . 1,683 parts In-Stock

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Vyrian

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LittleDiode

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Infinite Electronics LLP (Excess)

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SupplyDigital Components

Austria . 6,526 parts In-Stock

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Problanco Electronics

Mexico . 4,719 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Supply Digital

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Corphita

USA . 1,101 parts In-Stock

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UHIMA Technologies

Türkiye . 800 parts In-Stock

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TANS Electronics

Latvia . 189 parts In-Stock

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Corohmni

South Africa . 189 parts In-Stock

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Kulean Microsystems

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Overview

Unleash the power of innovation with the KSA733 by Onsemi. Crafted with precision and expertise, this PNP small signal bipolar junction transistor offers unparalleled performance for amplifier applications. With a maximum VCEsat of 0.3V and a minimum DC current gain of 40, this transistor delivers exceptional quality and reliability. The cylindrical package design ensures easy installation, while the maximum collector-emitter voltage of 50V guarantees optimal functionality. Elevate your projects to new heights with the KSA733 - where excellence meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and allows for easy handling and installation of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

A single configuration simplifies circuit design and makes integration into existing systems easier.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates low saturation voltage and better efficiency in amplifier applications.

Package Shape: ROUND

The round shape of the package allows for easy placement on PCBs and helps with thermal dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are suitable for manual soldering.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.25 W

The high power dissipation capability ensures reliable operation under varying load conditions.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for operation in a wide range of voltage levels.

Minimum DC Current Gain (hFE): 40

A minimum hFE of 40 ensures stable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand elevated temperatures in various applications.

Nominal Transition Frequency (fT): 180 MHz

The high transition frequency allows for high-frequency amplification and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA733 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.8 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

KSA733 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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