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KSA733CYTA

Onsemi

KSA733CYTA by Onsemi

KSA733CYTA by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.25W, hFE of 120, and operates at up to 150°C. With a max VCE of 50V and IC of 0.15A, it offers reliable performance in various electronic circuits.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,529 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

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$0.040

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8,529

$0.040

$0.040

$0.040

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Flip Electronics (Authorized)

USA . 93,828 parts In-Stock

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93,828

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Flip Electronics

USA . 93,828 parts In-Stock

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93,828

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Chip Stock

USA . 76,000 parts In-Stock

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76,000

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Cyclops Electronics Ltd

UK . 74,000 parts In-Stock

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74,000

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Digiode

USA . 2,247 parts In-Stock

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2,247

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Vyrian

USA . 2,131 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,960 parts In-Stock

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Nova Conductors

Japan . 57 parts In-Stock

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57

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 18,591 parts In-Stock

1+ parts

$0.382

100+ parts

$0.382

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$0.382

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18,591

$0.382

$0.382

$0.382

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Ampacity Inc.

Singapore . 124,919 parts In-Stock

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$48.050

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$48.050

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Kepictronics

USA . 74,000 parts In-Stock

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74,000

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,328 parts In-Stock

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TANS Electronics

Latvia . 7,579 parts In-Stock

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Kulean Microsystems

USA . 5,174 parts In-Stock

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SupplyDigital Components

Austria . 5,096 parts In-Stock

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Perfect Parts

USA . 4,592 parts In-Stock

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Continental Prestige Electronics

USA . 3,465 parts In-Stock

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Problanco Electronics

Mexico . 3,138 parts In-Stock

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Corphita

USA . 2,257 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Argo Parts USA

USA . 1,565 parts In-Stock

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Supply Digital

USA . 1,233 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 271 parts In-Stock

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Corohmni

South Africa . 244 parts In-Stock

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Overview

Unlock the power of quality and reliability with the KSA733CYTA by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees superior performance and durability in their Small Signal Bipolar Junction Transistors. Ideal for amplifier applications, this PNP transistor offers a seamless integration into your projects, delivering outstanding results every time. Trust in Onsemi to provide you with the value, benefits, and advantages you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier to incorporate this transistor into a system.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance and reliability in amplification tasks.

Package Shape: ROUND

The round package shape is compact and versatile, allowing for easy integration into various PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring reliable electrical connections in a circuit.

Maximum Power Dissipation (Abs): 0.25 W

With a high maximum power dissipation, this transistor can handle increased power levels without overheating, ensuring stable operation.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact form factor, making it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 120

The high minimum DC current gain ensures reliable amplification performance, making this transistor ideal for amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring stable performance in various environments.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating provides robust protection against voltage spikes, ensuring reliable operation in high voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable and long-lasting choice for electronic circuits.

Maximum Collector Current (IC): 0.15 A

With a high maximum collector current rating, this transistor can handle increased current loads, ensuring reliable operation in power circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability in circuit connections.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and soldering, making it easy to incorporate this transistor into a circuit.

Nominal Transition Frequency (fT): 180 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for high-speed applications such as RF amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA733CYTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA733CYTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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