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KSA708R

Onsemi

KSA708R by Onsemi

The Onsemi KSA708R is a PNP BJT transistor with a max VCEsat of 0.7V, ideal for switching applications. It has a min hFE of 40 and can handle a max collector-emitter voltage of 60V. With a package style of cylindrical and through-hole terminals, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,519 parts In-Stock

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Vyrian

USA . 1,225 parts In-Stock

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SupplyDigital Components

Austria . 6,025 parts In-Stock

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Kulean Microsystems

USA . 3,751 parts In-Stock

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Problanco Electronics

Mexico . 3,528 parts In-Stock

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TANS Electronics

Latvia . 2,376 parts In-Stock

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Supply Digital

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Corphita

USA . 1,667 parts In-Stock

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UHIMA Technologies

Türkiye . 478 parts In-Stock

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Corohmni

South Africa . 195 parts In-Stock

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Overview

Enhance your electronic projects with the KSA708R by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for switching applications. With a maximum VCEsat of 0.7V and a minimum DC current gain of 40, this transistor offers reliable performance. Whether you're a hobbyist or a professional, the KSA708R will provide you with the value, benefits, and advantages you need to bring your ideas to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in on/off circuit operations.

Maximum VCEsat: 0.7 V

Low VCEsat minimizes power loss and enhances efficiency in switching operations.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection in PCB mounting applications.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into various circuit configurations.

Maximum Power Dissipation (Abs): 0.8 W

The high power dissipation rating allows for reliable operation under varying load conditions.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage requirements in different applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA708R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

13 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.8 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA708R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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