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KSA708CYTA

Onsemi

KSA708CYTA by Onsemi

KSA708CYTA by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 60V and max current of 0.7A, ideal for switching applications. It has a min DC current gain of 120 and operates up to 150°C, making it suitable for high-power dissipation environments in cylindrical packages with matte tin finish.

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 185,365 parts In-Stock

1+ parts

-

100+ parts

$0.071

1k+ parts

$0.059

10k+ parts

$0.053

185,365

-

$0.071

$0.059

$0.053

Verical

USA . 170,401 parts In-Stock

1+ parts

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$0.066

170,401

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$0.066

DigiKey

USA . 4,000 parts In-Stock

1+ parts

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$0.084

4,000

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$0.084

Flip Electronics (Authorized)

USA . 2,977 parts In-Stock

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2,977

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RS (Exports)

UK . 900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.089

10k+ parts

$0.063

900

-

-

$0.089

$0.063

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,271 parts In-Stock

1+ parts

$0.056

100+ parts

-

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2,271

$0.056

-

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Vyrian

USA . 572 parts In-Stock

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$0.059

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572

$0.059

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Chip Stock

USA . 45,000 parts In-Stock

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45,000

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Flip Electronics

USA . 2,977 parts In-Stock

1+ parts

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100+ parts

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2,977

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,367 parts In-Stock

1+ parts

$0.053

100+ parts

-

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3,367

$0.053

-

-

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Corohmni

South Africa . 185 parts In-Stock

1+ parts

$0.059

100+ parts

-

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185

$0.059

-

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Microchip USA

USA . 1,790 parts In-Stock

1+ parts

$527.370

100+ parts

$508.190

1k+ parts

$498.600

10k+ parts

$489.010

1,790

$527.370

$508.190

$498.600

$489.010

Continental Prestige Electronics

USA . 185,365 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.070

10k+ parts

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185,365

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-

$0.070

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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36,530

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Perfect Parts

USA . 21,893 parts In-Stock

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21,893

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QUARKTWIN TECHNOLOGY LTD

USA . 18,636 parts In-Stock

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18,636

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Problanco Electronics

Mexico . 8,138 parts In-Stock

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8,138

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TANS Electronics

Latvia . 7,242 parts In-Stock

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7,242

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A-Z Elektronik GmbH

Germany . 6,156 parts In-Stock

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6,156

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Alle Elektronik GmbH

Germany . 4,104 parts In-Stock

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4,104

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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Kulean Microsystems

USA . 1,359 parts In-Stock

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1,359

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Allen Electronics Distributors

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$0.154

1k+ parts

$0.102

10k+ parts

$0.073

1,000

-

$0.154

$0.102

$0.073

SupplyDigital Components

Austria . 877 parts In-Stock

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877

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Supply Digital

USA . 864 parts In-Stock

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864

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UHIMA Technologies

Türkiye . 761 parts In-Stock

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761

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Overview

Enhance your electronic projects with the KSA708CYTA by Onsemi, a top-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor offers reliable performance and durability. With a maximum collector-emitter voltage of 60V and a maximum power dissipation of 0.8W, this transistor is ideal for various projects that require precision and efficiency. Upgrade your circuits with the KSA708CYTA and experience the superior quality and functionality it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection, making this transistor suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and ensures compatibility with other PNP components.

Configuration: SINGLE

The single configuration simplifies circuit design and makes this transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance in switching circuits.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8W, this transistor can handle moderate power levels without overheating.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in circular or compact spaces.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies soldering and connection of the transistor to a PCB or breadboard.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit design and allows for easy connection to other components.

Minimum DC Current Gain (hFE): 120

With a minimum DC current gain of 120, this transistor provides consistent amplification and performance in various circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliability and stability even in high-temperature environments.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, this transistor can handle relatively higher voltages in circuit applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and efficiency in various electronic circuits.

Maximum Collector Current (IC): 0.7 A

The maximum collector current of 0.7A allows for handling higher current levels in circuit applications, making this transistor versatile.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and ensures reliable electrical connections for enhanced performance.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and allows for easy integration into circuit designs.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50MHz, this transistor can operate at high frequencies for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) KSA708CYTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA708CYTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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