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2DD2661-13

Diodes Incorporated

2DD2661-13 by Diodes Incorporated

2DD2661-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 2W, hFE of 270, and fT of 170MHz. Ideal for switching applications, it has a max collector-emitter voltage of 12V and max collector current of 2A. Suitable for surface mount with matte tin finish in a small outline package style.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 15,189 parts In-Stock

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France . 642 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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Corohmni

South Africa . 83 parts In-Stock

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$0.843

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AZTECH Wire

Italy . 231 parts In-Stock

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Ampacity Inc.

Singapore . 480 parts In-Stock

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$52.050

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USA . 17,382 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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Argo Parts USA

USA . 2,655 parts In-Stock

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Continental Prestige Electronics

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Overview

Unleash the power of innovation with the 2DD2661-13 by Diodes Incorporated! Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers exceptional quality and reliability. Ideal for switching applications, this NPN transistor delivers unparalleled performance in a compact package. Say goodbye to limitations and hello to endless possibilities with the 2DD2661-13. Experience the difference that superior technology and craftsmanship can make in your projects. Elevate your creations today with Diodes Incorporated's 2DD2661-13.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility and reliable performance.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers fast and efficient switching performance.

Surface Mount: YES

Surface mount capability allows for easy and space-saving integration onto PCBs, ideal for compact and streamlined designs.

Maximum Power Dissipation (Abs): 2 W

With a high power dissipation rating, this transistor can handle larger loads and dissipate heat effectively.

Maximum Collector-Emitter Voltage: 12 V

The high collector-emitter voltage rating ensures reliable operation and protection against voltage spikes in the circuit.

Nominal Transition Frequency (fT): 170 MHz

The high transition frequency enables fast signal switching and amplification, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DD2661-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DD2661-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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