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2DD2679-13

Diodes Incorporated

2DD2679-13 by Diodes Incorporated

2DD2679-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 2W, hFE of 270, and max operating temp of 150°C. Ideal for switching applications in small outline packages, it offers a collector-emitter voltage of 30V and collector current up to 2A.

Median Price

$0.355

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,275 parts In-Stock

1+ parts

$0.610

100+ parts

$0.240

1k+ parts

$0.162

10k+ parts

$0.123

1,275

$0.610

$0.240

$0.162

$0.123

Mouser Electronics

USA . 13 parts In-Stock

1+ parts

$0.610

100+ parts

$0.240

1k+ parts

$0.163

10k+ parts

$0.142

13

$0.610

$0.240

$0.163

$0.142

Verical

USA . 290,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.100

290,000

-

-

-

$0.100

Arrow

USA . 117,500 parts In-Stock

1+ parts

-

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-

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$0.062

117,500

-

-

-

$0.062

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,500

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 2,288 parts In-Stock

1+ parts

$0.540

100+ parts

$0.243

1k+ parts

$0.148

10k+ parts

$0.113

2,288

$0.540

$0.243

$0.148

$0.113

IBS Electronics

USA . 97,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.079

97,500

-

-

-

$0.079

VNN

France . 2,625 parts In-Stock

1+ parts

-

100+ parts

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2,625

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-

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NAC Semi

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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2,500

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Cyclops Electronics Ltd

UK . 372 parts In-Stock

1+ parts

-

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372

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LIBRA Elektronik GmbH

Germany . 148 parts In-Stock

1+ parts

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148

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 128,011 parts In-Stock

1+ parts

$0.115

100+ parts

-

1k+ parts

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10k+ parts

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128,011

$0.115

-

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Component Stockers USA

USA . 383,482 parts In-Stock

1+ parts

$0.450

100+ parts

$0.090

1k+ parts

$0.090

10k+ parts

$0.070

383,482

$0.450

$0.090

$0.090

$0.070

Corohmni

South Africa . 105 parts In-Stock

1+ parts

$1.588

100+ parts

-

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105

$1.588

-

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RC Electronics

USA . 82,289 parts In-Stock

1+ parts

-

100+ parts

$0.160

1k+ parts

$0.140

10k+ parts

$0.140

82,289

-

$0.160

$0.140

$0.140

Perfect Parts

USA . 72,800 parts In-Stock

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72,800

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Infinite Electronics LLP (Excess)

. 42,011 parts In-Stock

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42,011

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Lixinc

USA . 9,724 parts In-Stock

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9,724

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Kepictronics

USA . 9,000 parts In-Stock

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9,000

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Eastek

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 4,447 parts In-Stock

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4,447

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Continental Prestige Electronics

USA . 1,824 parts In-Stock

1+ parts

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1,824

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Aranea Global

USA . 500 parts In-Stock

1+ parts

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500

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Overview

Unleash the power of innovation with the 2DD2679-13 by Diodes Incorporated. As a leader in small signal bipolar junction transistors, this NPN transistor is designed for switching applications, offering unparalleled performance and reliability. With a maximum power dissipation of 2W and a minimum DC current gain of 270, this transistor delivers exceptional efficiency and precision. Its surface mount design and compact package make it ideal for a wide range of electronic devices. Trust Diodes Incorporated to provide cutting-edge solutions that exceed expectations. Experience the difference with the 2DD2679-13 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, offering high efficiency and fast switching speeds.

Configuration: SINGLE

Simplified design with a single transistor, easy to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such tasks.

Surface Mount: YES

Can be easily mounted on PCBs, streamlining the manufacturing process.

Maximum Power Dissipation (Abs): 2 W

Capable of handling up to 2 watts of power, suitable for various applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for industrial environments.

Maximum Collector-Emitter Voltage: 30 V

Allows for higher voltage operations, expanding the range of applications.

Maximum Collector Current (IC): 2 A

Can handle currents up to 2 amperes, suitable for medium-power applications.

Nominal Transition Frequency (fT): 240 MHz

High frequency operation, suitable for RF and high-speed signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DD2679-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DD2679-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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