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2DD2652-7

Diodes Incorporated

2DD2652-7 by Diodes Incorporated

2DD2652-7 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 0.5W, hFE of 270, and fT of 260MHz. Ideal for switching applications due to its single configuration and max collector current of 1.5A. Package style is small outline with gull wing terminals for surface mount assembly.

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Mouser Electronics

USA . 14,156 parts In-Stock

1+ parts

$0.310

100+ parts

$0.120

1k+ parts

$0.080

10k+ parts

$0.067

14,156

$0.310

$0.120

$0.080

$0.067

Newark

USA . 355 parts In-Stock

1+ parts

$0.317

100+ parts

$0.133

1k+ parts

$0.090

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-

355

$0.317

$0.133

$0.090

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Future Electronics

Canada . 24,000 parts In-Stock

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$0.028

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$0.028

Arrow

USA . 19,000 parts In-Stock

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$0.026

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$0.026

Verical

USA . 19,000 parts In-Stock

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$0.026

19,000

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$0.026

Element14

Singapore . 2,445 parts In-Stock

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$0.044

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2,445

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-

$0.044

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Farnell

UK . 365 parts In-Stock

1+ parts

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100+ parts

$0.095

1k+ parts

$0.057

10k+ parts

$0.055

365

-

$0.095

$0.057

$0.055

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.059

100+ parts

-

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10

$0.059

-

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TME

Poland . 1,730 parts In-Stock

1+ parts

$0.170

100+ parts

$0.069

1k+ parts

$0.050

10k+ parts

$0.043

1,730

$0.170

$0.069

$0.050

$0.043

Bristol Electronics

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

$0.150

1k+ parts

$0.045

10k+ parts

$0.030

48,000

-

$0.150

$0.045

$0.030

IBS Electronics

USA . 24,000 parts In-Stock

1+ parts

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100+ parts

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$0.037

24,000

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$0.037

Vyrian

USA . 21,227 parts In-Stock

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21,227

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Chip Stock

USA . 18,425 parts In-Stock

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NAC Semi

USA . 18,000 parts In-Stock

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$0.048

18,000

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$0.048

BCID Electronics Ltd.

Israel . 4,246 parts In-Stock

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4,246

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VNN

France . 3,647 parts In-Stock

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3,647

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Semicontronic

India . 21,101 parts In-Stock

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$0.022

100+ parts

$0.021

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$0.021

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$0.022

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$0.021

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Ampacity Inc.

Singapore . 21,011 parts In-Stock

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$0.022

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21,011

$0.022

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Argo Parts USA

USA . 1,749 parts In-Stock

1+ parts

$0.059

100+ parts

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$0.057

1,749

$0.059

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$0.057

Bastille Electronics

Australia . 120 parts In-Stock

1+ parts

$0.059

100+ parts

$0.056

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$0.053

10k+ parts

$0.053

120

$0.059

$0.056

$0.053

$0.053

Corohmni

South Africa . 28 parts In-Stock

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$0.065

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28

$0.065

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Aztec Data Supply Inc.

USA . 3,996 parts In-Stock

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$0.918

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3,996

$0.918

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$1.212

100+ parts

$1.103

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$0.994

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350

$1.212

$1.103

$0.994

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Perfect Parts

USA . 21,974 parts In-Stock

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Lixinc

USA . 17,257 parts In-Stock

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Continental Prestige Electronics

USA . 3,165 parts In-Stock

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$0.062

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$0.047

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$0.032

3,165

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$0.032

Eastek

USA . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Overview

Discover the high-quality 2DD2652-7 by Diodes Incorporated, a top-of-the-line Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured with precision and expertise, this NPN transistor offers exceptional performance and reliability. Its compact design and versatile configuration make it ideal for various electronic projects. Experience seamless operation and superior functionality with the 2DD2652-7, delivering unmatched value and benefits to customers seeking top-notch components for their applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient current control and switching capabilities, making this transistor suitable for a wide range of electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easy integration into electronic projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and reliable performance in on/off operations.

Surface Mount: YES

With surface mount capabilities, this transistor can be easily mounted on PCBs, saving space and streamlining the manufacturing process.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient space utilization on the PCB, making it ideal for compact electronic devices.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering, ensuring a reliable electrical connection.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and compatibility with a variety of applications.

Maximum Power Dissipation (Abs): 0.5 W

The high maximum power dissipation allows for reliable operation under various load conditions, making this transistor suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures space-saving design, making it a preferred choice for compact electronic devices.

Minimum DC Current Gain (hFE): 270

The high minimum DC current gain ensures stable and consistent amplification in the circuit, making this transistor suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 12 V

The high maximum collector-emitter voltage rating offers protection against voltage spikes, ensuring reliable operation in high-voltage circuits.

Transistor Element Material: SILICON

The use of silicon as the element material provides high reliability and performance, making this transistor a durable choice for long-term use.

Maximum Collector Current (IC): 1.5 A

The high maximum collector current rating allows for handling of high current loads, making this transistor suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures corrosion resistance and reliable soldering connections, enhancing the overall performance and longevity of the transistor.

Terminal Position: DUAL

With a dual terminal position, this transistor offers flexibility in circuit layout and compatibility with various mounting configurations.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures quick and efficient soldering, making this transistor suitable for high-volume manufacturing.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without damage, ensuring reliable assembly onto PCBs.

Nominal Transition Frequency (fT): 260 MHz

The high nominal transition frequency indicates fast switching speeds and high-frequency capabilities, making this transistor suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DD2652-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DD2652-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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