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2DD2656-7

Diodes Incorporated

2DD2656-7 by Diodes Incorporated

2DD2656-7 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 0.5W, hFE of 270, and max collector-emitter voltage of 30V. Ideal for switching applications in small outline packages, it operates at up to 150°C with a transition frequency of 270MHz.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 41,856 parts In-Stock

1+ parts

$0.300

100+ parts

$0.116

1k+ parts

$0.076

10k+ parts

$0.053

41,856

$0.300

$0.116

$0.076

$0.053

Mouser Electronics

USA . 2,503 parts In-Stock

1+ parts

-

100+ parts

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$0.048

2,503

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-

-

$0.048

Element14

Singapore . 1,935 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.059

10k+ parts

$0.051

1,935

-

-

$0.059

$0.051

Farnell

UK . 1,430 parts In-Stock

1+ parts

-

100+ parts

$0.061

1k+ parts

$0.052

10k+ parts

-

1,430

-

$0.061

$0.052

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

PC Components Company LLC

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

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Bristol Electronics

USA . 3,000 parts In-Stock

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3,000

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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3,000

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Semi Source

USA . 418 parts In-Stock

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418

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Distributors (Availability)

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Ampacity Inc.

Singapore . 13,805 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

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13,805

$0.041

-

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Component Stockers USA

USA . 57,377 parts In-Stock

1+ parts

$0.320

100+ parts

$0.110

1k+ parts

$0.070

10k+ parts

$0.040

57,377

$0.320

$0.110

$0.070

$0.040

Continental Prestige Electronics

USA . 2,365 parts In-Stock

1+ parts

$0.323

100+ parts

$0.123

1k+ parts

$0.062

10k+ parts

-

2,365

$0.323

$0.123

$0.062

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Perfect Parts

USA . 36,972 parts In-Stock

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36,972

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Lixinc

USA . 11,651 parts In-Stock

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11,651

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Authorized Procurement Solutions

USA . 9,465 parts In-Stock

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9,465

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Northwest PG Solutions

USA . 908 parts In-Stock

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908

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Native Components

USA . 128 parts In-Stock

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128

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Overview

Enhance your electronic projects with the reliable and high-quality 2DD2656-7 Small Signal Bipolar Junction Transistor from Diodes Incorporated. Designed for switching applications, this NPN transistor offers a seamless performance in a compact rectangular package with gull wing terminals for easy mounting. With a maximum collector current of 1A and a transition frequency of 270MHz, this transistor provides optimal power dissipation and temperature resistance up to 150°C. Trust in Diodes Incorporated's expertise in manufacturing to deliver a product that meets your needs for efficiency and reliability in your circuits. Elevate your designs with the 2DD2656-7 and experience the difference in performance it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, making it versatile for various applications.

Configuration: SINGLE

Simplified design for ease of use and integration in circuits.

Transistor Application: SWITCHING

Optimized for fast switching operations, making it ideal for applications requiring quick response times.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

Compact design that saves space on the PCB and allows for efficient component placement.

No. of Terminals: 3

Simplifies the connection process, reducing complexity in circuit design.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

Compact package size that is suitable for applications with limited space constraints.

Minimum DC Current Gain (hFE): 270

Ensures stable and predictable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for harsh environments.

Maximum Collector-Emitter Voltage: 30 V

Allows for higher voltage handling capability in the circuit.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor.

Maximum Collector Current (IC): 1 A

Capable of handling high current levels, suitable for applications that require high power output.

Terminal Finish: MATTE TIN

Provides good contact and solderability, ensuring reliable connections.

Terminal Position: DUAL

Allows for easy and secure mounting on the PCB, enhancing stability during operation.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly process for consistent performance.

Peak Reflow Temperature °C: 260

High reflow temperature capability for reliable soldering and durability.

Nominal Transition Frequency (fT): 270 MHz

High frequency response for efficient signal processing in high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2DD2656-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2DD2656-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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