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BC858A-7-F

Diodes Incorporated

BC858A-7-F by Diodes Incorporated

Diodes Inc. BC858A-7-F is a PNP BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 125. Ideal for switching applications, it operates at up to 150°C, with VCE of 30V and IC of 0.1A. Package style is small outline SMT with matte tin finish in gull wing shape.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 2,485 parts In-Stock

1+ parts

-

100+ parts

$0.063

1k+ parts

$0.040

10k+ parts

$0.035

2,485

-

$0.063

$0.040

$0.035

Farnell

UK . 1,730 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.041

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1,730

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-

$0.041

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Distributors (In-Stock)

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Vyrian

USA . 3,686 parts In-Stock

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3,686

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Semtec, LLC

USA . 3,480 parts In-Stock

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3,480

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,938 parts In-Stock

1+ parts

$0.029

100+ parts

-

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1,938

$0.029

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.190

100+ parts

$0.085

1k+ parts

$0.029

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-

3,000

$0.190

$0.085

$0.029

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Native Components

USA . 805 parts In-Stock

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$0.760

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805

$0.760

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Northwest PG Solutions

USA . 874 parts In-Stock

1+ parts

$0.836

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874

$0.836

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AZTECH Wire

Italy . 593 parts In-Stock

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$16.130

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593

$16.130

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Component Stockers USA

USA . 473 parts In-Stock

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$99.990

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473

$99.990

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Perfect Parts

USA . 109,253 parts In-Stock

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109,253

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Lixinc

USA . 19,374 parts In-Stock

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19,374

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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3,000

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Overview

Unleash the power of innovation with the BC858A-7-F by Diodes Incorporated! This high-quality PNP small signal bipolar junction transistor is perfect for switching applications, offering exceptional performance and reliability. With its compact design and versatile functionality, this transistor is a must-have for any electronic project. Trust in Diodes Incorporated's expertise and experience to deliver top-notch products that exceed your expectations. Elevate your projects to the next level with the BC858A-7-F and experience the difference for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for switching functions.

Configuration: SINGLE

Simplifies circuit design and allows for easy integration into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering efficient performance in on/off control scenarios.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving time and space in electronic designs.

Maximum Power Dissipation (Abs): 0.3 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels, ensuring reliable operation.

Package Shape: RECTANGULAR

Rectangular shape allows for compact placement on circuit boards, optimizing space utilization.

No. of Terminals: 3

Simple design with only three terminals allows for easy connection in circuits.

Maximum Collector-Emitter Voltage: 30 V

Suitable for applications requiring voltage regulation and protection.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast response times in switching applications, making it ideal for high-speed circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC858A-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

125

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC858A-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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