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MMBT6521LT1

Onsemi

MMBT6521LT1 by Onsemi

MMBT6521LT1 by Onsemi is a NPN BJT transistor with 300 min hFE, 0.3W power dissipation, and 25V collector-emitter voltage. Ideal for amplifier applications, it features a small outline package style and Gull Wing terminals for surface mount assembly. Operating at up to 150 °C, it offers reliable performance in various electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,975 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

2,975

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$0.030

$0.025

$0.023

Distributors (In-Stock)

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Digiode

USA . 1,579 parts In-Stock

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$0.024

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-

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1,579

$0.024

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Chip Stock

USA . 63,000 parts In-Stock

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Vyrian

USA . 11,353 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 497 parts In-Stock

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$0.022

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497

$0.022

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Corohmni

South Africa . 147 parts In-Stock

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$0.025

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147

$0.025

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AZTECH Wire

Italy . 303 parts In-Stock

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$17.730

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303

$17.730

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Component Stockers USA

USA . 588 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 8,323 parts In-Stock

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Problanco Electronics

Mexico . 4,205 parts In-Stock

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TANS Electronics

Latvia . 3,841 parts In-Stock

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SupplyDigital Components

Austria . 3,751 parts In-Stock

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UHIMA Technologies

Türkiye . 853 parts In-Stock

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Overview

Upgrade your electronic devices with the MMBT6521LT1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) perfect for amplifiers. Manufactured by industry leader Onsemi, this NPN transistor offers unparalleled reliability and performance. With a maximum power dissipation of 0.3W and a maximum collector-emitter voltage of 25V, this transistor is ideal for a wide range of applications. Experience the benefits of high DC current gain, efficient surface mount capability, and a compact package style that saves space. Trust Onsemi to deliver superior quality and value with the MMBT6521LT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor a good choice for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easier and more efficient assembly onto circuit boards.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy integration into electronic designs.

Terminal Form: GULL WING

GULL WING terminals offer secure connection options for stable electrical connections.

No. of Terminals: 3

3 terminals provide necessary connections for the transistor to function within a circuit.

Maximum Power Dissipation (Abs): 0.3 W

Capable of dissipating up to 0.3W of power, making it suitable for low power applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is ideal for compact electronic designs.

Minimum DC Current Gain (hFE): 300

High minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Operating temperature up to 150 °C allows for use in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 25 V

With a maximum voltage of 25V, this transistor can handle various voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon material offers excellent performance and reliability for electronic components.

Maximum Collector Current (IC): 0.1 A

Capable of handling collector currents up to 0.1A, suitable for low to medium current applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish provides good solderability for easy assembly onto circuit boards.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds during assembly processes.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures proper soldering and reliability during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT6521LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MMBT6521LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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