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2N3904RLRMG

Onsemi

2N3904RLRMG by Onsemi

2N3904RLRMG by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for low-power applications like amplification circuits due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

2

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

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Digiode

USA . 657 parts In-Stock

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$0.025

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657

$0.025

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Chip Stock

USA . 18,000 parts In-Stock

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18,000

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Vyrian

USA . 10,241 parts In-Stock

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VNN

France . 1,053 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Semicontronic

India . 2 parts In-Stock

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$0.021

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$0.020

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$0.020

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-

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$0.021

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$0.020

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Corphita

USA . 346 parts In-Stock

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$0.023

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346

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Corohmni

South Africa . 65 parts In-Stock

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$0.026

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65

$0.026

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Ampacity Inc.

Singapore . 2 parts In-Stock

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$0.048

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$0.048

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Aztec Data Supply Inc.

USA . 1,500 parts In-Stock

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$1.030

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AZTECH Wire

Italy . 760 parts In-Stock

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SupplyDigital Components

Austria . 7,413 parts In-Stock

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TANS Electronics

Latvia . 5,648 parts In-Stock

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Continental Prestige Electronics

USA . 5,196 parts In-Stock

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Argo Parts USA

USA . 2,160 parts In-Stock

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Problanco Electronics

Mexico . 1,702 parts In-Stock

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UHIMA Technologies

Türkiye . 901 parts In-Stock

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Kulean Microsystems

USA . 880 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Upgrade your electronic projects with the reliable 2N3904RLRMG Small Signal Bipolar Junction Transistor by Onsemi. Designed with quality and precision in mind, this NPN transistor offers excellent performance and durability for a wide range of applications. Whether you're working on amplifiers, switches, or signal processing circuits, this transistor provides the perfect solution with its high power dissipation, low turn-on/off times, and maximum collector-current capacity. Trust Onsemi's reputation for excellence and choose the 2N3904RLRMG for all your small signal BJT needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability in various environments.

Polarity or Channel Type: NPN

Commonly used type of transistor which allows for easy integration into existing circuits.

Configuration: SINGLE

Simplified design that is easy to work with and integrate into circuits.

Package Shape: ROUND

Compact shape that saves space and allows for easy mounting in tight spaces.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering on PCBs, making installation quick and efficient.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels without overheating, ensuring stable performance.

Package Style (Meter): CYLINDRICAL

Unique design that stands out and offers a distinct appearance.

Minimum DC Current Gain (hFE): 30

Ensures consistent amplification of signals for reliable performance in various applications.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures without losing performance, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 40 V

Allows for handling higher voltages, making this transistor versatile for different voltage requirements.

Transistor Element Material: SILICON

Silicon material provides better performance and efficiency compared to other materials.

Maximum Turn On Time (ton): 70 ns

Quick turn-on time ensures fast switching speeds, ideal for applications requiring rapid response.

Maximum Collector Current (IC): 0.2 A

Can handle moderate current levels, suitable for various signal amplification applications.

Maximum Turn Off Time (toff): 250 ns

Quick turn-off time allows for efficient switching, reducing power consumption and improving performance.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish that ensures good electrical conductivity and corrosion resistance.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and soldering, ensuring a secure connection.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes, ensuring reliability during manufacturing.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for fast signal processing and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3904RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

2N3904RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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