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BC848AW-7-F

Diodes Incorporated

BC848AW-7-F by Diodes Incorporated

BC848AW-7-F by Diodes Inc. is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.2W, hFE of 110, and operates up to 150°C. With a max collector-emitter voltage of 30V and peak reflow temp of 260°C, it's suitable for small outline packages in high-frequency circuits up to 300MHz.

Median Price

$0.022

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 90,000 parts In-Stock

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$0.022

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$0.022

Distributors (In-Stock)

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Nova Conductors

Japan . 85 parts In-Stock

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$0.046

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85

$0.046

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Chip Stock

USA . 78,000 parts In-Stock

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Vyrian

USA . 13,710 parts In-Stock

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VNN

France . 3,751 parts In-Stock

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Ampacity Inc.

Singapore . 46,150 parts In-Stock

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$0.018

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Semicontronic

India . 46,241 parts In-Stock

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$0.039

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$0.038

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$0.038

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$0.039

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Argo Parts USA

USA . 1,730 parts In-Stock

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$0.046

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$0.045

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Continental Prestige Electronics

USA . 877 parts In-Stock

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$0.046

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$0.045

877

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AZTECH Wire

Italy . 180 parts In-Stock

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$15.030

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Component Stockers USA

USA . 79,334 parts In-Stock

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Lixinc

USA . 18,828 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

USA . 5,091 parts In-Stock

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Perfect Parts

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Eastek

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Overview

Elevate your electronic designs with the BC848AW-7-F by Diodes Incorporated. As a leading manufacturer of high-quality Small Signal Bipolar Junction Transistors (BJT), Diodes Incorporated brings you a reliable NPN transistor that excels in switching applications. With its compact package shape and gull wing terminal form, this transistor is perfect for space-constrained projects. Experience the benefits of a minimum DC current gain of 110 and a maximum operating temperature of 150°C, providing durability and efficiency. Trust Diodes Incorporated to deliver exceptional performance and value with the BC848AW-7-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and insulation properties, making it suitable for various applications.

Polarity or Channel Type: NPN

Allows for positive voltage to be applied to the collector terminal, making it ideal for use in amplification and switching circuits.

Configuration: SINGLE

Simplifies circuit design and layout, making it easier to work with in electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and efficient operation.

Surface Mount: YES

Enables easy and convenient PCB mounting, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

Offers a compact form factor, making it suitable for applications where space is limited.

No. of Terminals: 3

Provides necessary connections for proper device operation while keeping the design simple and straightforward.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels without overheating, ensuring reliable performance under normal operating conditions.

Package Style (Meter): SMALL OUTLINE

Provides a low profile design, making it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 110

Ensures sufficient current amplification, allowing for reliable signal amplification and switching.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 30 V

Provides a suitable voltage rating for a wide range of applications, ensuring reliable operation under varying voltage conditions.

Transistor Element Material: SILICON

Offers good performance characteristics and reliability compared to other materials, making it a popular choice for electronic components.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels, making it suitable for low to medium power applications.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: DUAL

Allows for flexible PCB mounting options, providing compatibility with various circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a short duration, ensuring proper soldering and assembly processes.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering processes, ensuring proper bonding with PCB.

Nominal Transition Frequency (fT): 300 MHz

Provides high-frequency performance, making it suitable for applications requiring fast switching speeds and high bandwidth.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC848AW-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC848AW-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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