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MMBT123S-7-F

Diodes Incorporated

MMBT123S-7-F by Diodes Incorporated

Diodes Incorporated MMBT123S-7-F is a NPN BJT transistor with 150 min hFE, 18V VCEO, and 1A IC. Ideal for switching applications, it has a max power dissipation of 0.3W in a small outline package suitable for surface mount technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 3,000 parts In-Stock

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Chip Stock

USA . 109,372 parts In-Stock

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Vyrian

USA . 9,316 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Corohmni

South Africa . 410 parts In-Stock

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$0.414

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410

$0.414

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AZTECH Wire

Italy . 96 parts In-Stock

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$21.910

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96

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Ampacity Inc.

Singapore . 932 parts In-Stock

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$32.050

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932

$32.050

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Metaverse IC Inc.

Canada . 180,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,094 parts In-Stock

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Perfect Parts

USA . 11,495 parts In-Stock

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Continental Prestige Electronics

USA . 4,393 parts In-Stock

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RC Electronics

USA . 3,833 parts In-Stock

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$0.230

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$0.220

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$0.210

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,707 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Enhance your electronic projects with the reliable MMBT123S-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated guarantees top-notch quality and performance. This small signal bipolar junction transistor is perfect for switching applications, offering a seamless operation with a maximum collector current of 1A. With its NPN polarity and compact package body material, the MMBT123S-7-F provides superior functionality in a wide range of electronic devices. Trust Diodes Incorporated to deliver exceptional value and efficiency with this advanced transistor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring its reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor suitable for a wide range of electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for quick and efficient switching operations.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Collector-Emitter Voltage: 18 V

This high voltage rating makes the transistor suitable for a variety of applications that require higher voltage handling capabilities.

Maximum Collector Current (IC): 1 A

With a high collector current rating, this transistor can handle higher current loads, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency allows for fast signal switching, making this transistor ideal for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT123S-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

18 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBT123S-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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