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2SC4081RT1

Onsemi

2SC4081RT1 by Onsemi

2SC4081RT1 by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 50V and max collector current of 0.1A. With a min DC current gain of 180, it's ideal for amplifier applications. This surface mount transistor has a small outline package style and operates up to 150 °C.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 118,974 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

118,974

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$0.030

$0.025

$0.023

DigiKey

USA . 118,974 parts In-Stock

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$0.040

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$0.040

Verical

USA . 114,000 parts In-Stock

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114,000

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Digiode

USA . 1,734 parts In-Stock

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$0.024

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1,734

$0.024

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Chip Stock

USA . 63,000 parts In-Stock

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Vyrian

USA . 8,881 parts In-Stock

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Semi Source

USA . 2,850 parts In-Stock

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2,850

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Distributors (Availability)

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Corphita

USA . 722 parts In-Stock

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$0.022

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722

$0.022

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Corohmni

South Africa . 150 parts In-Stock

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$0.025

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150

$0.025

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Native Components

USA . 619 parts In-Stock

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$0.193

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$0.185

619

$0.193

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$0.185

Northwest PG Solutions

USA . 521 parts In-Stock

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$0.212

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$0.187

521

$0.212

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$0.187

AZTECH Wire

Italy . 239 parts In-Stock

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$17.620

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Continental Prestige Electronics

USA . 118,974 parts In-Stock

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Kulean Microsystems

USA . 7,765 parts In-Stock

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Problanco Electronics

Mexico . 7,132 parts In-Stock

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TANS Electronics

Latvia . 2,282 parts In-Stock

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SupplyDigital Components

Austria . 1,098 parts In-Stock

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UHIMA Technologies

Türkiye . 378 parts In-Stock

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Overview

Upgrade your electronics with the 2SC4081RT1 by Onsemi, a high-quality NPN transistor perfect for amplification applications. This small signal bipolar junction transistor boasts single configuration and a maximum collector-emitter voltage of 50V, ideal for enhancing your circuit designs. With a minimum DC current gain of 180 and maximum power dissipation of 0.2W, this transistor offers reliability and performance. Trust in Onsemi's reputation for excellence and innovation to bring value to your projects with the 2SC4081RT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal performance and durability, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance.

Surface Mount: YES

Easy to mount on PCBs, convenient for assembly and space-saving.

Package Shape: RECTANGULAR

Compact shape for efficient use of space on the PCB.

No. of Terminals: 3

Simple 3-terminal connection for ease of use in circuit design.

Maximum Power Dissipation (Abs): 0.2 W

Can handle relatively high power dissipation, suitable for various applications.

Minimum DC Current Gain (hFE): 180

High DC current gain ensures efficient amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 50 V

Suitable for amplification tasks that require moderate voltage handling capabilities.

Transistor Element Material: SILICON

Silicon-based transistor element offers high performance and reliability.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate collector current, suitable for various amplifier applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish ensures good solderability, making it easy to mount on PCBs.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a sufficient amount of time during manufacturing processes.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability for reliable soldering during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC4081RT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SC4081RT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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