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2SC4102FRAT106R

ROHM

2SC4102FRAT106R by ROHM

ROHM 2SC4102FRAT106R is a NPN BJT transistor with VCEsat of 0.5V, hFE of 180, and fT of 140MHz. Ideal for amplifier applications due to its low power dissipation and high collector-emitter voltage. AEC-Q101 certified for automotive use, featuring a small outline package with gull wing terminals.

Median Price

$0.207

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Nova Conductors

Japan . 10 parts In-Stock

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VNN

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Vyrian

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Argo Parts USA

USA . 4,895 parts In-Stock

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$0.201

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Continental Prestige Electronics

USA . 2,724 parts In-Stock

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$0.203

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Corohmni

South Africa . 534 parts In-Stock

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Aztec Data Supply Inc.

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$1.240

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AZTECH Wire

Italy . 701 parts In-Stock

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$11.938

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Semicontronic

India . 156 parts In-Stock

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$34.050

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$33.199

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$33.028

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$50.050

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Overview

Upgrade your electronic devices with the 2SC4102FRAT106R by ROHM, a top-quality Small Signal Bipolar Junction Transistor (BJT) perfect for amplifier applications. Manufactured by industry leader ROHM, this NPN transistor offers exceptional performance and reliability. With a maximum VCEsat of just 0.5V and a minimum DC current gain of 180, this transistor ensures efficient power usage and high signal amplification. Trust ROHM's expertise and elevate your projects with the 2SC4102FRAT106R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easy to work with and ideal for simple amplifier designs.

Surface Mount: YES

Surface mount capability enables easy integration into PCB designs, making it suitable for compact electronic devices.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to efficient operation.

Minimum DC Current Gain (hFE): 180

High DC current gain ensures reliable amplification of signals with minimal distortion.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in a variety of environments without risking overheating.

Maximum Collector-Emitter Voltage: 120 V

Allows for high voltage handling capabilities, suitable for various amplifier applications.

Maximum Collector Current (IC): 0.05 A

Sufficient collector current rating for small signal amplification requirements.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency indicates good high-frequency performance, making it suitable for high-speed signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC4102FRAT106R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2SC4102FRAT106R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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