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2SC4081T106Q

ROHM

2SC4081T106Q by ROHM

ROHM's 2SC4081T106Q is a NPN BJT transistor with max VCEsat of 0.4V, hFE of 120, and fT of 180MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 50V.

Median Price

$0.179

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Verical

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Overview

Upgrade your electronic projects with the high-quality 2SC4081T106Q Small Signal Bipolar Junction Transistor by ROHM. Manufactured with precision and expertise, this NPN transistor is perfect for amplifier applications. With a maximum VCEsat of 0.4V and a minimum DC current gain of 120, this transistor offers superior performance and efficiency. Its small outline package shape and dual terminal position make it easy to integrate into your designs. Trust ROHM for reliable components that deliver exceptional results. Elevate your projects with the 2SC4081T106Q and experience unparalleled value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is known for its durability and resistance to heat, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor a good choice for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to integrate into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

This feature allows for easy and efficient PCB assembly, saving space and making the transistor suitable for compact electronic devices.

Maximum VCEsat: 0.4 V

Low VCEsat minimizes power loss and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy installation and placement on the PCB.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and enhances thermal performance.

No. of Terminals: 3

Simplified connection with only 3 terminals, aiding in ease of use and circuit design.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation capacity, this transistor can handle high power levels without thermal issues.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures stable and reliable amplification performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in various environmental conditions.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating ensures reliable operation in circuits with high voltage levels.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its high performance and reliability in electronic devices.

Maximum Collector Current (IC): 0.15 A

With a high collector current rating, this transistor can handle moderate to high current levels in amplifier circuits.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

This terminal finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time ensures quick and efficient soldering during manufacturing.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable solder connections during assembly.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency enables the transistor to operate at high frequencies, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC4081T106Q attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SC4081T106Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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