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2SC4116-Y,LF

Toshiba

2SC4116-Y,LF by Toshiba

Toshiba's 2SC4116-Y,LF is a NPN BJT transistor with max VCEsat of 0.25V and hFE of 120. Ideal for amplifier applications, it has a max IC of 0.15A and operates up to 125°C. With a fT of 80MHz, this GULL WING terminal transistor is AEC-Q101 compliant.

Median Price

$0.190

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Mouser Electronics

USA . 2,548 parts In-Stock

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$0.075

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Nova Conductors

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Advanced Electronics

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600

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Overview

Discover the power of the 2SC4116-Y,LF by Toshiba, a high-quality Small Signal Bipolar Junction Transistor designed for amplifier applications. With Toshiba's reputation for reliability and innovation, this NPN transistor offers exceptional performance and efficiency. Its compact design and low VCEsat of 0.25 V make it ideal for a wide range of electronic projects. Experience the value and benefits of this transistor today and take your amplification to the next level with Toshiba's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Polarity or Channel Type: NPN

Commonly used in amplifiers and other applications, making it versatile.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high performance.

Surface Mount: YES

Enables easy and efficient installation on circuit boards.

Maximum VCEsat: 0.25 V

Low saturation voltage leads to reduced power dissipation and improved efficiency.

Package Shape: RECTANGULAR

Space-saving design for compact applications.

Terminal Form: GULL WING

Facilitates secure soldering and connection.

No. of Terminals: 3

Simplified connection setup for ease of use.

Maximum Power Dissipation (Abs): 0.1 W

Efficient power handling capability.

Package Style (Meter): SMALL OUTLINE

Ideal for applications with limited space.

Maximum Power Dissipation Ambient: 0.1 W

Maintains performance under varying temperature conditions.

Minimum DC Current Gain (hFE): 120

Consistent performance in amplification tasks.

Maximum Operating Temperature: 125 °C

Suitable for operation in various environments.

Maximum Collector-Base Capacitance: 3.5 pF

Minimizes capacitive effects in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Sufficient voltage handling capacity for common applications.

Transistor Element Material: SILICON

Reliable and widely used material for transistor elements.

Maximum Collector Current (IC): 0.15 A

Adequate current rating for typical amplification tasks.

Terminal Position: DUAL

Enhances versatility in circuit configurations.

Reference Standard: AEC-Q101

Compliant with automotive industry standards for quality and reliability.

Nominal Transition Frequency (fT): 80 MHz

High frequency capability for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC4116-Y,LF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.1 W

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

2SC4116-Y,LF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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