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2SC4604TPE6

Toshiba

2SC4604TPE6 by Toshiba

The Toshiba 2SC4604TPE6 is a NPN BJT transistor with max. Vce of 50V, Ic of 3A, and hFE of 40. Ideal for switching applications due to its single configuration and high fT of 100MHz. Packaged in cylindrical form with through-hole terminals for easy installation.

Median Price

$0.110

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Nova Conductors

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Continental Prestige Electronics

USA . 6,937 parts In-Stock

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Argo Parts USA

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Corohmni

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AZTECH Wire

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Netroflash

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Overview

Upgrade your electronic projects with the high-quality 2SC4604TPE6 NPN transistor from Toshiba. Known for their reliable and durable components, Toshiba delivers top-notch performance in small signal bipolar junction transistors like this one. Ideal for switching applications, this transistor offers a minimum DC current gain of 40 and a maximum collector-emitter voltage of 50V. With a maximum collector current of 3A and a nominal transition frequency of 100MHz, this transistor is perfect for a wide range of electronic devices. Trust Toshiba to provide you with the best components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes this transistor lightweight and durable.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration in various circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit layout and reduces complexity.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for a wide range of electronic devices.

Package Shape: ROUND

The round package shape provides a compact form factor for space-constrained designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers easy and secure connections for PCB assembly.

No. of Terminals: 3

With three terminals, this transistor is easy to connect and integrate into circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a uniform and reliable form factor for consistent performance.

Minimum DC Current Gain (hFE): 40

The high minimum DC current gain ensures consistent and reliable amplification.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage of 50V, this transistor can handle a wide range of operating conditions.

Transistor Element Material: SILICON

The silicon transistor element material offers high performance and reliability.

Maximum Collector Current (IC): 3 A

Capable of handling currents up to 3A, making it suitable for a variety of applications.

Terminal Position: BOTTOM

The bottom terminal position provides easy access for soldering and connection.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100MHz allows for fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC4604TPE6 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4604TPE6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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