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2N5401RLRAG

Onsemi

2N5401RLRAG by Onsemi

2N5401RLRAG by Onsemi is a PNP BJT with max. VCE of 150V, IC of 0.6A, and hFE of 50. Ideal for amplifier applications due to its max. power dissipation of 1.5W and fT of 100MHz in a cylindrical package with through-hole terminals.

Median Price

$0.097

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 37,000 parts In-Stock

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NexGen Digital

USA . 10,842 parts In-Stock

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Vyrian

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Digiode

USA . 1,557 parts In-Stock

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Sensible Micro Corp

USA . 500 parts In-Stock

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$0.090

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 426 parts In-Stock

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$0.088

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426

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AZTECH Wire

Italy . 838 parts In-Stock

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$11.330

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Kulean Microsystems

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A-Z Elektronik GmbH

Germany . 4,503 parts In-Stock

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Corphita

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Northwest PG Solutions

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SupplyDigital Components

Austria . 2,126 parts In-Stock

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TANS Electronics

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UHIMA Technologies

Türkiye . 425 parts In-Stock

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Overview

Get ready to experience top-notch performance with the 2N5401RLRAG by Onsemi. Crafted by a leading manufacturer in the industry, this small signal bipolar junction transistor boasts a PNP configuration perfect for amplifier applications. With a maximum power dissipation of 1.5W and a maximum collector-emitter voltage of 150V, this transistor delivers reliability and efficiency like no other. Upgrade your projects with the unrivaled quality and value that Onsemi products offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

This PNP configuration makes it compatible with a range of circuit designs and applications.

Configuration: SINGLE

SINGLE configuration simplifies the use and installation of the transistor in electronic circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape offers ease of handling and installation, especially in tight spaces.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections on circuit boards.

No. of Terminals: 3

The 3 terminals allow for versatile connectivity in different circuit configurations.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation capacity, this transistor can handle a range of power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design for efficient circuit integration.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures reliable and stable amplification in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding environmental conditions.

Maximum Collector-Emitter Voltage: 150 V

The high collector-emitter voltage rating allows for use in circuits requiring higher voltage levels.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring consistent performance.

Maximum Collector Current (IC): 0.6 A

The maximum collector current of 0.6 A allows for handling moderate current levels in the circuit.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

This terminal finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and soldering on circuit boards.

Maximum Time At Peak Reflow Temperature (s): 40

With a short reflow time, this transistor can be quickly and efficiently integrated into manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper soldering and stable connections during manufacturing.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency allows for fast switching speeds and high-frequency operation in circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5401RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5401RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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