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61095

Micropac Industries

61095 by Micropac Industries

Micropac Industries' 61095 is a PNP BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. Features include max. power dissipation of 0.4W, min. DC current gain of 100, and max. operating temp of 200°C. Package style is cylindrical with wire terminals in a round shape.

Median Price

$8.950

Lifecycle Status

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1k+

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TME

Poland . 5 parts In-Stock

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$8.950

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$5.230

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Vyrian

USA . 11,920 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Mil-Aero Solutions, Inc.

USA . 6 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,926 parts In-Stock

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$1.900

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AZTECH Wire

Italy . 790 parts In-Stock

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$5.930

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790

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Argo Parts USA

USA . 4,463 parts In-Stock

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Aranea Global

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Continental Prestige Electronics

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Overview

Upgrade your electronics with the high-quality 61095 by Micropac Industries. This Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications, with a maximum power dissipation of 0.4W and a minimum DC current gain of 100. With a maximum collector-emitter voltage of 60V and maximum operating temperature of 200°C, this PNP transistor is designed for reliability and efficiency. Whether you're a hobbyist or a professional, trust Micropac Industries to provide you with top-notch components for your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity which helps in efficient heat dissipation, increasing the reliability and longevity of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high side switching applications, making this transistor suitable for various switching applications.

Configuration: SINGLE

Single configuration makes it easy to use and integrate into circuits, reducing complexity in design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.

Package Shape: ROUND

Round package shape provides uniform stress distribution, reducing the risk of mechanical failure.

Terminal Form: WIRE

Wire terminals offer a secure and reliable connection, contributing to the overall durability and stability of the transistor.

Maximum Power Dissipation (Abs): 0.4 W

The low maximum power dissipation allows for energy-efficient operation and prevents overheating issues.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and space-saving design, suitable for applications with limited space.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures consistent and predictable amplification of current, making it reliable in various circuit configurations.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows the transistor to withstand tough operating conditions without performance degradation.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating makes the transistor suitable for applications that require higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material provides good thermal stability and reliability, crucial for ensuring consistent performance over time.

Maximum Turn On Time (ton): 45 ns

Low turn on time allows for fast switching speeds, making it ideal for applications that require quick response times.

Maximum Collector Current (IC): 0.6 A

High maximum collector current rating enables the transistor to handle higher current loads without risk of damage, ensuring reliable operation.

Maximum Turn Off Time (toff): 300 ns

Low turn off time helps in fast switching off, improving efficiency and reducing power loss during switching transitions.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and connect in various circuit configurations, enhancing overall usability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 61095 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Micropac Industries

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

61095 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4010-14-525-8763, 4010145258763, 5331-12-191-1093, 5331121911093, 5365-00-506-8616, 5365005068616, 5950-00-079-7017, 5950000797017, 6760-14-426-9441, 6760144269441

NIIN

145258763, 121911093, 005068616, 000797017, 144269441

Manufacturer Highlights

Micropac Industries

The company was founded in 1963 by William W. Horsman first known as Farsi Industries to provide contract engineering services, manufactured electronic exercisers, and printed circuit boards. In 1974, Nicholas Nadolsky and Heinz-Werner Hempel obtained the company. Micropac Industries Inc. was born. Today, the company, headed by CEO Mark King, continues to evolve as the market changes. From small standard discrete components to fully custom integrated systems, we have the experience and the expertise to deliver.

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