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DXT690BP5Q-13

Diodes Incorporated

DXT690BP5Q-13 by Diodes Incorporated

DXT690BP5Q-13 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 60, and VCE max of 45V. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high fT of 150MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 150,000 parts In-Stock

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$0.250

Avnet

USA . 5,000 parts In-Stock

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NAC Semi

USA . 5,000 parts In-Stock

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$0.370

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Bristol Electronics

USA . 4,789 parts In-Stock

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Dan-Mar Components

USA . 4,789 parts In-Stock

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Native Components

USA . 897 parts In-Stock

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$1.580

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897

$1.580

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.703

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$1.550

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$1.396

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$1.703

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$1.396

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Northwest PG Solutions

USA . 44 parts In-Stock

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$1.738

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AZTECH Wire

Italy . 1,142 parts In-Stock

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$8.310

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Perfect Parts

USA . 33,600 parts In-Stock

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Eastek

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Overview

Enhance your electronic projects with the DXT690BP5Q-13 by Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor that promises reliable performance in switching applications. Crafted with precision using innovative technology, this NPN transistor offers a maximum collector-emitter voltage of 45V and a maximum collector current of 3A, ensuring seamless functionality. Whether you're a DIY enthusiast or a seasoned professional, this product's small outline package and versatile configuration make it a must-have component for your circuit designs. Elevate your projects with Diodes Incorporated's trusted expertise and unlock endless possibilities with the DXT690BP5Q-13.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient switching capabilities.

Maximum Collector-Emitter Voltage: 45 V

With a high maximum collector-emitter voltage, this transistor can handle a wide range of voltage levels, making it versatile and suitable for different circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low leakage current, and good temperature stability, which are essential for reliable operation in various applications.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency indicates that this transistor can handle high-frequency signals efficiently, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DXT690BP5Q-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DXT690BP5Q-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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