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DXT690BP5-13

Diodes Incorporated

DXT690BP5-13 by Diodes Incorporated

DXT690BP5-13 by Diodes Inc. is a NPN BJT transistor with 3A IC, 45V VCE, and 150MHz fT. Ideal for switching applications due to its high power dissipation of 3.2W and small outline package style. Features flat terminals, matte tin finish, and can operate at up to 150°C temperature.

Median Price

$0.780

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 4,460 parts In-Stock

1+ parts

$0.559

100+ parts

$0.292

1k+ parts

$0.186

10k+ parts

$0.185

4,460

$0.559

$0.292

$0.186

$0.185

Mouser Electronics

USA . 4,305 parts In-Stock

1+ parts

$1.000

100+ parts

$0.407

1k+ parts

$0.286

10k+ parts

$0.236

4,305

$1.000

$0.407

$0.286

$0.236

DigiKey

USA . 621 parts In-Stock

1+ parts

$1.000

100+ parts

$0.406

1k+ parts

$0.283

10k+ parts

$0.214

621

$1.000

$0.406

$0.283

$0.214

Newark

USA . 3,411 parts In-Stock

1+ parts

$1.030

100+ parts

$0.418

1k+ parts

$0.291

10k+ parts

-

3,411

$1.030

$0.418

$0.291

-

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.200

5,000

-

-

-

$0.200

Element14

Singapore . 4,460 parts In-Stock

1+ parts

-

100+ parts

$0.495

1k+ parts

$0.363

10k+ parts

-

4,460

-

$0.495

$0.363

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 834 parts In-Stock

1+ parts

$7.610

100+ parts

-

1k+ parts

-

10k+ parts

-

834

$7.610

-

-

-

Metaverse IC Inc.

Canada . 111,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

111,000

-

-

-

-

Perfect Parts

USA . 29,994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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29,994

-

-

-

-

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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20,000

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 5,901 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,901

-

-

-

-

Continental Prestige Electronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$0.374

1k+ parts

$0.236

10k+ parts

$0.198

5,000

-

$0.374

$0.236

$0.198

Northwest PG Solutions

USA . 1,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$7.458

10k+ parts

-

1,006

-

-

$7.458

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Overview

Unleash the power of innovation with the DXT690BP5-13 by Diodes Incorporated! This high-quality NPN Small Signal Bipolar Junction Transistor is designed for switching applications, offering a maximum collector-emitter voltage of 45V and a minimum DC current gain of 60. With a maximum power dissipation of 3.2W and a peak reflow temperature of 260°C, this transistor delivers top-notch performance and reliability. Perfect for a wide range of electronic projects, the DXT690BP5-13 is the ideal choice for customers who demand excellence in their designs. Elevate your creations to new heights with this cutting-edge component from a trusted industry leader.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material ensures protection and durability for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration into circuits and compatibility with other components.

Configuration: SINGLE

Single configuration simplifies circuit designs and makes the transistor easy to use for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability makes it easy to mount the transistor on a PCB, saving space and allowing for automated assembly.

Package Shape: RECTANGULAR

Rectangular package shape provides easy handling and placement on a PCB.

Terminal Form: FLAT

Flat terminal form makes soldering and connection easy and secure.

No. of Terminals: 3

With 3 terminals, this transistor is easy to integrate into circuits and provides necessary connections.

Maximum Power Dissipation (Abs): 3.2 W

High maximum power dissipation allows for the handling of larger loads and ensures the transistor can withstand high power conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on a PCB and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 60

Minimum DC current gain of 60 ensures stable and reliable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows for reliable operation in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 45 V

Maximum collector-emitter voltage of 45V provides a safe operating range for various applications.

Transistor Element Material: SILICON

Silicon transistor element material offers high performance and reliability for the transistor.

Maximum Collector Current (IC): 3 A

High maximum collector current of 3A allows for handling higher current loads in the circuit.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and ensures a reliable electrical connection.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and connection options.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and provides easy connection for the collector terminal.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand peak reflow temperature for up to 30 seconds, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability of 260°C ensures reliable solder joints during assembly.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency of 150MHz allows for fast switching and amplification of signals in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DXT690BP5-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DXT690BP5-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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