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BC847AT-7

Diodes Incorporated

BC847AT-7 by Diodes Incorporated

BC847AT-7 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 110, and max IC of 0.1A. It operates up to 150°C, has VCE of 45V, and fT of 100MHz. Widely used in small signal applications due to its compact size and high transition frequency.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 10,846 parts In-Stock

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VNN

France . 673 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Prism Electronics

USA . 48 parts In-Stock

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Ampacity Inc.

Singapore . 532 parts In-Stock

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$0.102

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532

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Semicontronic

India . 237 parts In-Stock

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$0.222

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$0.216

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Corohmni

South Africa . 130 parts In-Stock

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$0.382

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130

$0.382

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Aztec Data Supply Inc.

USA . 4,590 parts In-Stock

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$1.770

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$1.770

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AZTECH Wire

Italy . 579 parts In-Stock

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$19.264

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Component Stockers USA

USA . 492 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 17,196 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Continental Prestige Electronics

USA . 987 parts In-Stock

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Perfect Parts

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Argo Parts USA

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Experience the superior quality and reliability of Diodes Incorporated with the BC847AT-7 small signal bipolar junction transistor. This NPN transistor offers exceptional performance in a compact package, perfect for a wide range of applications. With a high DC current gain and low power dissipation, this transistor provides reliable operation at temperatures up to 150°C. Trust Diodes Incorporated to deliver the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are more readily available compared to PNP transistors.

Configuration: SINGLE

Simplifies circuit design and makes it easier to use in single transistor applications.

Surface Mount: YES

Allows for easy and efficient placement on circuit boards, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 0.15 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 45 V

Suitable for low voltage applications and provides a safety margin to prevent voltage breakdown.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a common choice in electronic circuits.

Nominal Transition Frequency (fT): 100 MHz

Capable of operating at high frequencies, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847AT-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847AT-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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