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MMBT2222AT-7

Diodes Incorporated

MMBT2222AT-7 by Diodes Incorporated

Diodes Inc. MMBT2222AT-7 is a NPN BJT with max. Vce of 40V, Ic of 0.6A, and fT of 300MHz. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation capabilities. Suitable for surface mount designs requiring fast switching speeds and moderate current handling.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 14,581 parts In-Stock

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PC Components Company LLC

USA . 2,283 parts In-Stock

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Bristol Electronics

USA . 2,283 parts In-Stock

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2,283

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Prism Electronics

USA . 1,859 parts In-Stock

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1,859

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 142 parts In-Stock

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AZTECH Wire

Italy . 593 parts In-Stock

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$17.762

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593

$17.762

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Ampacity Inc.

Singapore . 1,592 parts In-Stock

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$26.050

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$26.050

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RC Electronics

USA . 40,500 parts In-Stock

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$0.120

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$0.110

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$0.110

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$0.110

$0.110

Perfect Parts

USA . 34,287 parts In-Stock

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GreenTree Electronics

Israel . 29,106 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,298 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Unlock the power of electronics with the MMBT2222AT-7 by Diodes Incorporated. As a trusted manufacturer of high-quality Small Signal Bipolar Junction Transistors (BJT), Diodes Incorporated delivers top-notch performance and reliability. This NPN transistor is perfect for a variety of applications, offering customers unmatched value and benefits. Whether you're a hobbyist or a professional, the MMBT2222AT-7 provides the advantage you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Maximum Power Dissipation: 0.15 W

Efficient power dissipation allows for stable operation and prevents overheating, ensuring reliability in operation.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low to medium voltage applications, making this transistor versatile for various circuit designs.

Nominal Transition Frequency: 300 MHz

High transition frequency allows for fast switching speeds in high-frequency applications, making this transistor ideal for amplification and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2222AT-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMBT2222AT-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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